NTE2648 datasheet(1/2 Pages) NTE

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NTE2648 Datasheet(PDF) 1 Page - NTE Electronics

Part #	NTE2648

Description	Silicon Complementary Transistors General Purpose Amp

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Manufacturer	NTE [NTE Electronics]

Direct Link	http://www.nteinc.com

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NTE2648 Datasheet(HTML) 1 Page - NTE Electronics

NTE2648 Datasheet HTML 2Page - NTE Electronics

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NTE2647 (PNP) & NTE2648 (NPN)

Silicon Complementary Transistors

General Purpose Amp

Features:

D High Transition Frequency

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

Collector−Base Voltage, VCBO

230V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Collector−Emitter Voltage, VCEO

230V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Emitter−Base Voltage, VEBO

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Collector Current, IC

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Collector Power Dissipation, PC

TA = +25°C

2.0W

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

TC = +25°C

20W

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature, TJ

+150°C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage Temperature Range, Tstg

−55° to +150°C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min

Typ Max Unit

Collector Cutoff Current

ICBO

VCB = 230V, IE = 0

−

1.0

µA

Emitter Cutoff Current

IEBO

VEB = V, IC = 0

−

1.0

µA

Collector−Emitter Breakdown Voltage V(BR)CEO IC = 10mA, IB = 0

230

−

DC Current Gain

hFE

VCE = 5V, IC = 100mA

100

−

320

Collector−Emitter Saturation Voltage VCE(sat) IC = 500mA, IB = 50mA

−

1.5

Base−Emitter Voltage

VBE

VCE = 5V, IC = 500mA

−

1.0

Transition Frequency

NTE2747

VCE = 10V, IC = 100mA

−

MHz

NTE2748

−

100

−

MHz

Collector Output Capacitance

NTE2647

Cob

VCB = 10V, IE = 0, f = 1MHz

−

NTE2748

−

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