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NTE5870 Datasheet(PDF) 1 Page - NTE Electronics |
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NTE5870 Datasheet(HTML) 1 Page - NTE Electronics |
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1 / 2 page  NTE5810 & NTE5811, NTE5870 thru NTE5891 Silicon Power Rectifier Diode, 12 Amp, DO4 Description: The NTE5810, NTE5811, and NTE5870 through NTE5891 are low power general purpose rectifier diodes in a DO4 type package designed for battery chargers, converters, power supplies, and ma- chine tool controls. Features: D High Surge Current Capability D High Voltage Available D Designed for a Wide Range of Applications D Available in Anode−to−Case or Cathode−to−Case Style Ratings and Characteristics: Average Forward Current (TC = +144°C Max), IF(AV) 12A .................................... Maximum Forward Surge Current, IFSM 50Hz 230A ...................................................................... 60Hz 240A ...................................................................... Fusing Current, I2t 50Hz 260A2s .................................................................... 60Hz 240A2s .................................................................... Fusing Current, I2pt 3580A2ps ......................................................... Maximum Reverse Recovery Voltage Range, VRRM 50 to 1200V .............................. Voltage Ratings: (TJ = +175°C, Note 1) NTE Type Number VRRM−Max Repetitive Peak Reverse Volt. (V) VRSM−Max Non−Repetitive Peak Reverse Voltage (V) VR−Max. Direct Reverse Voltage (V) VR(SR) Minimum Avalanche Voltage (V) IRM−Max Reverse Current Rated VRRM (mA) Cathode to Case Anode to Case 5870 5871 50 75 50 − 12 5872 5873 100 150 100 − 12 5874 5875 200 275 200 − 12 5876 5877 300 385 300 − 12 5878 5879 400 500 400 500 12 5880 5881 500 613 500 626 12 5882 5883 600 725 600 750 12 5886 5887 800 950 800 950 12 5890 5891 1000 1200 1000 1150 12 5810 5811 1200 1400 1200 1350 12 |
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