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PSMN1R8-30BL Datasheet(PDF) 5 Page - NXP Semiconductors |
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PSMN1R8-30BL Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 15 page PSMN1R8-30BL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 1 — 22 March 2012 5 of 15 NXP Semiconductors PSMN1R8-30BL N-channel 30 V, 1.8 m Ω logic level MOSFET in D2PAK 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base see Figure 4 - 0.3 0.56 K/W Rth(j-a) thermal resistance from junction to ambient Minimum footprint; mounted on a printed-circuit board -50 -K/W Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration; typical values 003aad080 10 -4 10 -3 10 -2 10 -1 1 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 1 tp (s) Zth(j-mb) (K/W) single shot 0.02 0.05 0.1 0.2 δ = 0.5 tp T P t tp T δ = |
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