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PSMN2R7-30BL Datasheet(PDF) 7 Page - NXP Semiconductors

Part # PSMN2R7-30BL
Description  N-channel 30 V, 1.8 m logic level MOSFET in D2PAK
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PSMN2R7-30BL Datasheet(HTML) 7 Page - NXP Semiconductors

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PSMN2R7-30BL
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 21 March 2012
7 of 15
NXP Semiconductors
PSMN2R7-30BL
N-channel 30 V 3.0 m
Ω logic level MOSFET in D2PAK
tr
rise time
VDS =15V; RL =0.5 Ω; VGS =4.5 V;
RG(ext) =4.7 Ω
-82
-ns
td(off)
turn-off delay time
-
74
-
ns
tf
fall time
-
35
-
ns
Source-drain diode
VSD
source-drain voltage
IS =25A; VGS =0V; Tj =25°C;
see Figure 17
-0.7
1.2
V
trr
reverse recovery time
IS =25A; dIS/dt = -100 A/µs; VGS =0V;
VDS =15V
-40
-ns
Qr
recovered charge
-
33
-
nC
Table 7.
Characteristics …continued
Tested to JEDEC standards where applicable.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Fig 5.
Input and reverse transfer capacitances as a
function of gate-source voltage; typical values
Fig 6.
Forward transconductance as a function of
drain current; typical values
003aad410
0
2000
4000
6000
8000
0369
12
VGS (V)
C
(pF)
Ciss
Crss
003aad411
0
30
60
90
120
150
180
0
25
50
75
100
ID (A)
gfs
(S)


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