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TAS5614LA Datasheet(PDF) 10 Page - Texas Instruments |
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TAS5614LA Datasheet(HTML) 10 Page - Texas Instruments |
10 / 32 page TAS5614LA SLAS846 – MAY 2012 www.ti.com ELECTRICAL CHARACTERISTICS (continued) PVDD_X = 36 V, GVDD_X = 12 V, VDD = 12 V, TC (Case temperature) = 75°C, fS = 384 kHz, unless otherwise specified. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT OTE-OTWdifferential (1) OTE-OTW differential 30 °C A device reset is needed to clear OTEHYST (1) 25 °C FAULT after an OTE event OLPC Overload protection counter fPWM = 384 kHz 2.6 ms Resistor – programmable, nominal peak current in IOC Overcurrent limit protection 15 A 1 Ω load, ROC = 24 kΩ Resistor – programmable, nominal peak current in IOC_LATCHED Overcurrent limit protection, latched 15 A 1 Ω load, ROC = 62 kΩ Time from application of short condition to Hi-Z of IOCT Overcurrent response time 150 ns affected half bridge Internal pulldown resistor at output of Connected when RESET is active to provide IPD 3 mA each half bridge bootstrap charge. Not used in SE mode. STATIC DIGITAL SPECIFICATIONS VIH High level input voltage 1.9 V INPUT_X, M1, M2, M3, RESET VIL Low level input voltage 0.8 V LEAKAGE Input leakage current 100 μA OTW / SHUTDOWN (FAULT) Internal pullup resistance, OTW, CLIP, RINT_PU 20 26 33 k Ω FAULT to DVDD VOH High level output voltage Internal pullup resistor 3 3.3 3.6 V VOL Low level output voltage IO = 4mA 200 500 mV FANOUT Device fanout OTW, FAULT, CLIP No external pullup 30 devices 10 Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Link(s): TAS5614LA |
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