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TAS5717 Datasheet(PDF) 7 Page - Texas Instruments |
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TAS5717 Datasheet(HTML) 7 Page - Texas Instruments |
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7 / 68 page  TAS5717 TAS5719 www.ti.com SLOS655A – NOVEMBER 2010 – REVISED FEBRUARY 2011 ABSOLUTE MAXIMUM RATINGS over operating free-air temperature range (unless otherwise noted) (1) VALUE UNIT DVDD, AVDD, HPVDD –0.3 to 3.6 V Supply voltage PVDD_X –0.3 to 30 V HPL_IN, HPR_IN –0.3 to 4.2 V 3.3-V digital input –0.5 to DVDD + 0.5 V Input voltage 5-V tolerant(2) digital input (except MCLK) –0.5 to DVDD + 2.5(3) V 5-V tolerant MCLK input –0.5 to AVDD + 2.5(3) V OUT_x to PGND_x 22(4) V BST_x to PGND_x 32(4) V Input clamp current, IIK ±20 mA Output clamp current, IOK ±20 mA Operating free-air temperature 0 to 85 °C Operating junction temperature range 0 to 150 °C Storage temperature range, Tstg –40 to 125 °C (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions are not implied. Exposure to absolute-maximum conditions for extended periods may affect device reliability. (2) 5-V tolerant inputs are PDN, RESET, SCLK, LRCLK, MCLK, SDIN, SDA, and SCL. (3) Maximum pin voltage should not exceed 6 V. (4) DC voltage + peak ac waveform measured at the pin should be below the allowed limit for all conditions. THERMAL INFORMATION TAS5717 THERMAL METRIC(1) PHP UNIT 48 PINS θJA Junction-to-ambient thermal resistance(2) 35.2 °C/W θJB Junction-to-board thermal resistance(3) 10.9 °C/W θJC(bottom) Junction-to-case (bottom) thermal resistance(4) 1.6 °C/W θJC(top) Junction-to-case (top) thermal resistance(5) 19.7 °C/W ψJT Junction-to-top characterization parameter(6) 3.4 °C/W ψJB Junction-to-board characterization parameter(7) 10.1 °C/W (1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953. (2) The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard, high-K board, as specified in JESD51-7, in an environment described in JESD51-2a. (3) The junction-to-board thermal resistance is obtained by simulating in an environment with a ring cold plate fixture to control the PCB temperature, as described in JESD51-8. (4) The junction-to-case (bottom) thermal resistance is obtained by simulating a cold plate test on the exposed (power) pad. No specific JEDEC standard test exists, but a close description can be found in the ANSI SEMI standard G30-88. (5) The junction-to-case (top) thermal resistance is obtained by simulating a cold plate test on the package top. No specific JEDEC-standard test exists, but a close description can be found in the ANSI SEMI standard G30-88. (6) The junction-to-top characterization parameter, ψJT, estimates the junction temperature of a device in a real system and is extracted from the simulation data for obtaining θJA, using a procedure described in JESD51-2a (sections 6 and 7). (7) The junction-to-board characterization parameter, ψJB, estimates the junction temperature of a device in a real system and is extracted from the simulation data for obtaining θJA , using a procedure described in JESD51-2a (sections 6 and 7). © 2010–2011, Texas Instruments Incorporated Submit Documentation Feedback 7 Product Folder Link(s): TAS5717 TAS5719 |
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