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2SK2409 Datasheet(PDF) 1 Page - NEC |
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2SK2409 Datasheet(HTML) 1 Page - NEC |
1 / 8 page MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SK2409 is N-Channel MOS Field Effect Transistor de- signed for solenoid, motor, and lamp driver. FEATURES • Low On-Resistance RDS(on) ≤ 27 mΩ (VGS = 10 V, ID = 20 A) RDS(on) ≤ 40 mΩ (VGS = 4 V, ID = 20 A) • Low Ciss Ciss = 2040 pF TYP. • Built-in Gate Protection Diode QUALITY GRADE Standard Please refer to “Quality grade on NEC Semiconductor Device” (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. ABSOLUTE MAXIMUM RATINGS (Ta = 25 ˚C) Drain to Source Voltage VDSS 60 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID(DC) ±40 A Drain Current (pulse) ID(pulse) * ±160 A Total Power Dissipation (Ta = 25 ˚C) PT1 2.0 W Total Power Dissipation (Tc = 25 ˚C) PT2 35 W Channel Temperature Tch 150 ˚C Storage Temperature Tstg –55 to +150 ˚C Single Avalanche Current IAS** 40 A Single Avalanche Energy EAS ** 160 mJ * PW ≤ 10 µs, Duty Cycle ≤ 1 % ** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0 Document No. TC-2489 (O. D. No. TC-8028) Date Published September 1994 P Printed in Japan 2SK2409 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSION (in millimeters) 0.7 ±0.1 1.3 ±0.2 2.54 2.54 1.5 ±0.2 10.0 ±0.3 3.2 ±0.2 123 1. 2. 3. Gate Drain Source 4.5 ±0.2 2.7 ±0.2 0.65 ±0.1 2.5 ±0.1 MP-45F (ISOLATED TO-220) Drain Body Diode Gate Gate Protection Diode Source © 1994 DATA SHEET The information in this document is subject to change without notice. |
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