MOS FIELD EFFECT TRANSISTOR

DESCRIPTION

The 2SK2409 is N-Channel MOS Field Effect Transistor de-

signed for solenoid, motor, and lamp driver.

FEATURES

QUALITY GRADE

Standard

Please refer to “Quality grade on NEC Semiconductor Device”

(Document number IEI-1209) published by NEC Corporation to

know the specification of quality grade on the devices and its

recommended applications.

Drain to Source Voltage

60

V

Gate to Source Voltage

±20

V

Drain Current (DC)

±40

A

Drain Current (pulse)

*

±160

A

2.0

W

35

W

Channel Temperature

150

˚C

Storage Temperature

–55 to +150

˚C

Single Avalanche Current

40

A

Single Avalanche Energy

**

160

mJ

*

PW

≤ 10

µs, Duty Cycle ≤ 1 %

Document No. TC-2489

(O. D. No. TC-8028)

Date Published September 1994 P

Printed in Japan

2SK2409

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

PACKAGE DIMENSION

(in millimeters)

0.7 ±0.1

1.3 ±0.2

2.54

2.54

1.5 ±0.2

10.0 ±0.3

3.2 ±0.2

123

1.

2.

3.

Gate

Drain

Source

4.5 ±0.2

2.7 ±0.2

0.65 ±0.1

2.5 ±0.1

MP-45F (ISOLATED TO-220)

Drain

Body

Diode

Gate

Gate Protection

Diode

Source

©

1994

DATA SHEET

The information in this document is subject to change without notice.