NX8341UN-AZ datasheet(11/15 Pages) CEL

Part #	NX8341UN-AZ

Description	1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION

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Manufacturer	CEL [California Eastern Labs]

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NX8341 Series

ELECTRO-OPTICAL CHARACTERISTICS (TC =

−5 to +85°C, BOL, unless otherwise specified)

Parameter

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

Mean Optical Output Power

Pf

−2

dBm

Peak Emission Wavelength

λp

CW, Pf =

−2 dBm

1 290

1 330

nm

Side Mode Suppression Ratio

SMSR

CW, Pf =

−2 dBm

30

dB

Threshold Current

Ith

CW, TC = 25

°C

8

20

mA

CW

2

40

Differential Efficiency

ηd

CW, Pf =

−2 dBm, TC = 25°C

0.02

0.025

0.04

W/A

CW, Pf =

−2 dBm

0.005

0.05

Operation Voltage

Vop

CW, Pf =

−2 dBm

2

V

Monitor Current

Im

Pf =

−2 dBm, VR = 1.5 V

*1

90

700

µA

Monitor Dark Current

ID

VR = 1.5 V, TC = 25

°C

5

nA

VR = 1.5 V

50

Rise Time

tr

20-80%

*1

30

50

ps

Fall Time

tf

20-80%

*1

40

50

ps

Extinction Ratio

Ex

10 GbE, 10 G FC

*1

4

5

dB

Tracking Error

*2

γ

−1.0

1.0

dB

Input Impedance

Zin

25

Ω

Connector Repeatability

CR

With master pigtail

−1.0

1.0

dB

*1 9.95/10.3/10.5 Gb/s, PRBS 2

31

−1, NRZ, Duty Cycle = 50%

*2 Tracking Error:

γ

0

Im

TC = 25˚C

TC = –5 to +85˚C

Pf

(mW)

Pf

Pf @ 25˚C

(mA)

γ = 10 log

[dB]

Pf

Pf @ 25˚C

Data Sheet PL10525EJ03V0DS

11

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