PSMN027-100BS

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Product data sheet

Rev. 2 — 1 March 2012

6 of 14

NXP Semiconductors

PSMN027-100BS

N-channel 100V 26.8 m

Ω standard level MOSFET in D2PAK.

Source-drain diode

source-drain voltage

see Figure 17

-0.8

1.2

V

reverse recovery time

-47

-ns

recovered charge

-

91

-

nC

Table 6.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Fig 5.

Forward transconductance as a function of

drain current; typical values

Fig 6.

Transfer characteristics: drain current as a

function of gate-source voltage; typical values

Fig 7.

Input and reverse transfer capacitances as a

function of gate-source voltage; typical values

Fig 8.

Drain-source on-state resistance as a function

of gate-source voltage; typical values

003aae046

0

15

30

45

60

010

20

30

40

I

g

fs

(S)

003aae045

0

10

20

30

40

0246

V

I

D

(A)

T

T

003aae047

0

1000

2000

3000

05

10

V

C

(pF)

003aae049

0

30

60

90

120

0

5

10

15

20

V

R

DSon

(m

Ω)