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| 2SK2478 |
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 NEC
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2 page 
2SK2478 2 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. TEST CONDITIONS Drain to Source On-Resistance RDS (on) 5.0 7.5 VGS = 10 V, ID = 1.0 A Gate to Source Cutoff Voltage VGS (off) 2.5 3.5 VDS = 10 V, ID = 1 mA Forward Transfer Admittance | yfs | 0.6 VDS = 20 V, ID = 1.0 A Drain Leakage Current IDSS 100 VDS = VDSS, VGS = 0 Gate to Source Leakage Current IGSS ±100 VGS = ±30 V, VDS = 0 Input Capacitance Ciss 485 VDS = 10 V Output Capacitance Coss 75 VGS = 0 Reverse Transfer Capacitance Crss 10 f = 1 MHz Turn-On Delay Time td (on) 11 ID = 1.0 A Rise Time tr 3 VGS = 10 V Turn-Off Delay Time td (off) 35 VDD = 150 V Fall Time tf 8 RG = 150 Ω Total Gate Charge QG 17 ID = 2.0 A Gate to Source Charge QGS 3 VDD = 450 V Gate to Drain Charge QGD 8 VGS = 10 V Body Diode Forward Voltage VF (S-D) 1.0 IF = 2.0 A, VGS = 0 Reverse Recovery Time trr 580 IF = 2.0 A, VGS = 0 Reverse Recovery Charge Qrr 2.3 di/dt = 50 A/ µs UNIT Ω V S µA nA pF pF pF ns ns ns ns nC nC nC V ns µC The application circuits and their parameters are for references only and are not intended for use in actual design-in's. Test Circuit 3 Gate Charge VGS = 20 - 0 V PG RG = 25 Ω 50 Ω D.U.T. L VDD Test Circuit 1 Avalanche Capability PG. RG = 10 Ω D.U.T. RL VDD Test Circuit 2 Switching Time RG PG. IG = 2 mA 50 Ω D.U.T. RL VDD ID VDD IAS VDS BVDSS Starting Tch VGS 0 t = 1us Duty Cycle ≤ 1 % VGS Wave Form ID Wave Form VGS ID 10 % 10 % 0 0 90 % 90 % 90 % 10 % VGS (on) ID ton toff td (on) tr td (off) tf t |
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