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LMX2470 Datasheet(PDF) 3 Page - Texas Instruments

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Part # LMX2470
Description  2.6 GHz Delta-Sigma Fractional-N PLL with 800 MHz Integer-N PLL
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

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LMX2470
www.ti.com
SNAS195A – MAY 2004 – REVISED MAY 2004
Pin Descriptions (continued)
Pin #
Pin Name
I/O
Pin Description
7
VccRF
RF PLL power supply voltage input. Must be equal to VccIF . May range from 2.25V to 2.75V.
Bypass capacitors should be placed as close as possible to this pin and be connected directly to the
ground plane.
8
EN
I
Chip enable input. High impedance CMOS input. When EN is high, the chip is powered up, otherwise
it is powered down.
9
ENOSC
I
This pin should be grounded for normal operation.
10
CLK
I
MICROWIRE Clock. High impedance CMOS Clock input. Data for the various counters is clocked
into the 24 bit shift register on the rising edge.
11
DATA
I
MICROWIRE Data. High impedance binary serial data input.
12
LE
MICROWIRE Load Enable. High impedance CMOS input. Data stored in the shift registers is loaded
into the internal latches when LE goes HIGH
13
Ftest/LD
O
Test frequency output / Lock Detect
14
VddIF
-
Digital power supply for IF PLL
15
VccIF
-
IF power supply voltage input. Must be equal to VccRF. Input may range from 2.25 V to 2.75 V.
Bypass capacitors should be placed as close as possible to this pin and be connected directly to the
ground plane.
16
GND
-
Ground for RF PLL digital circuitry.
17
FinIF
I
IF prescaler input. Small signal input from the VCO.
18
GND
-
Digital ground for IF PLL
19
CPoutIF
O
IF PLL charge pump output
20
FLoutIF
O
IF Fastlock Output. Also functions as Programmable TRI-STATE CMOS output.
21
OSCout*
I/O
Complementary reference input or oscillator output.
22
OSCin
I
Reference input
23
VddRF
-
Digital power supply for RF PLL
24
FLoutRF
O
RF Fastlock Output. Also functions as Programmable TRI-STATE CMOS output.
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings
(1) (2)
Value
Parameter
Symbol
Units
Min
Typ
Max
Power Supply Voltage
VCC
-0.3
3.0
V
VDD
VCC
VCC
V
Voltage on any pin with GND =VSS = 0V
Vi
-0.3
VCC + 0.3
V
Storage Temperature Range
Ts
-65
+150
°C
Lead Temperature (Solder 4 sec.)
TL
+260
°C
(1)
“Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. "Recommended Operating Conditions"
indicate conditions for which the device is intended to be functional, but do not guarantee specific performance limits. For guaranteed
specifications and test conditions, see the Electrical Characteristics. The guaranteed specifications apply only for the test conditions
listed. Note also that these maximum ratings imply that the voltage at all the power supply pins of VccRF, VccIF, VddRF, and VddIF are
the same. VCCwill be used to refer to the voltage at these pins.
(2)
This Device is a high performance RF integrated circuit with an ESD rating < 2 kV and is ESD sensitive. Handling and assembly of this
device should only be done at ESD-free workstations.
Copyright © 2004, Texas Instruments Incorporated
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