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ESAC33MD Datasheet(PDF) 1 Page - Fuji Electric |
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ESAC33MD Datasheet(HTML) 1 Page - Fuji Electric |
1 / 3 page 10.5 Max. Ø3.2+0.2 5.08 2.54 0.8 1.2 4.5Max. 2.0 2.7 0.4 -0.1 6.0 ESAC33M(C,N,D) (8A) (200V / 8A) FAST RECOVERY DIODE Outline drawings, mm Features Insulated package by fully molding High voltage by mesa design High reliability Applications High speed switching Maximum ratings and characteristics Absolute maximum ratings Item Repetitive peak reverse voltage Non-repetitive peak reverse voltage Average output current Surge current Operating junction temperature Storage temperature Symbol VRRM VRSM IO IFSM Tj Tstg Conditions 30 -40 to +150 -40 to +150 Unit V V A A °C °C Electrical characteristics (Ta=25°C Unless otherwise specified ) Item Forward voltage drop Reverse current Reverse recovery time Thermal resistance Symbol VFM IRRM t rr Rth(j-c) Conditions IFM=2.0A VR=VRRM IF=0.1A, IR=0.1A Junction to case Max. 1.4 500 100 3.5 Unit V µA ns °C/W Square wave, duty=1/2, Tc=95°C Sine wave 10ms Rating -02 200 200 8* Connection diagram *Average forward current of centertap full wave connection ESAC33M- C ESAC33M- N ESAC33M- D 1 1 1 2 2 2 3 3 3 JEDEC EIAJ SC-67 |
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