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LM3100MHX Datasheet(PDF) 2 Page - Texas Instruments

Part # LM3100MHX
Description  SIMPLE SWITCHER짰 Synchronous 1MHz 1.5A Step-Down Voltage Regulator
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

LM3100MHX Datasheet(HTML) 2 Page - Texas Instruments

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LM3100
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
11
12
SW
SW
N/C
VIN
VIN
BST
GND
SS
N/C
N/C
N/C
N/C
PGND
PGND
VCC
RON
EN
FB
N/C
TST
EP
LM3100
SNVS421F – JANUARY 2006 – REVISED DECEMBER 2009
www.ti.com
Connection Diagram
Figure 1. 20-lead Plastic
eTSSOP
Pin Functions
Pin Descriptions
Pin
Name
Description
Application Information
1,9,10,12,19,20
N/C
No Connection
These pins must be left unconnected.
2, 3
SW
Switching Node
Internally connected to the buck switch source. Connect to
output inductor.
4, 5
VIN
Input supply voltage
Supply pin to the device. Nominal input range is 4.5V to
36V.
6
BST
Connection for bootstrap capacitor
Connect a 0.033µF capacitor from SW pin to this pin. An
internal diode charges the capacitor during the high-side
switch off-time.
7
GND
Analog Ground
Ground for all internal circuitry other than the synchronous
switches.
8
SS
Soft-start
An internal 8µA current source charges an external
capacitor to provide the soft- start function.
11
TST
Test mode enable pin
Force the device into test mode. Must be connected to
ground for normal operation.
13
FB
Feedback
Internally connected to the regulation and over-voltage
comparators. The regulation setting is 0.8V at this pin.
Connect to feedback divider.
14
EN
Enable pin
Connect a voltage higher than 1.26V to enable the
regulator.
15
RON
On-time Control
An external resistor from VIN to this pin sets the high-side
switch on-time.
16
VCC
Start-up regulator Output
Nominally regulated to 6V. Connect a capacitor of not less
than 680nF between VCC and GND for stable operation.
17, 18
PGND
Power Ground
Synchronous rectifier MOSFET source connection. Tie to
power ground plane.
DAP
EP
Exposed Pad
Thermal connection pad, connect to GND.
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
2
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Copyright © 2006–2009, Texas Instruments Incorporated
Product Folder Links: LM3100


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