PS1

PS2

IN

GATE

OUT

IN

GATE

OUT

LM5050-1

LM5050-1

GND

GND

VS

VS

GND

OFF

OUT

IN

GATE

LM5050-1

Shutdown

GND

GND

VS

Low= FET On, High= FET Off

100:

0.1 PF

+5.0V to +75V

LM5050-1, LM5050-1-Q1

www.ti.com

SNVS629D – MAY 2011 – REVISED JUNE 2013

LM5050-1/LM5050-1-Q1 High Side OR-ing FET Controller

Check for Samples: LM5050-1, LM5050-1-Q1

1

FEATURES

DESCRIPTION

The LM5050-1 High Side OR-ing FET Controller

2

•

Available in Standard and AEC-Q100 Qualified

operates in conjunction with an external MOSFET as

an ideal diode rectifier when connected in series with

a

power

source.

This

ORing

controller

allows

•

MOSFETs to replace diode rectifiers in power

75V

distribution networks thus reducing both power loss

and voltage drops.

•

+100 Volt Transient Capability

•

Charge Pump Gate Driver for External N-

The LM5050-1 controller provides charge pump gate

Channel MOSFET

drive for an external N-Channel MOSFET and a fast

response comparator to turn off the FET when

•

Fast 50ns Response to Current Reversal

current flows in the reverse direction. The LM5050-1

•

2A Peak Gate Turn-Off Current

can connect power supplies ranging from +5V to

•

+75V and can withstand transients up to +100V.

•

Package: SOT-6 (Thin SOT-23-6)

APPLICATIONS

•

Active OR-ing of Redundant (N+1) Power

Supplies

Typical Application Circuits

Figure 1. Full Application

Figure 2. Typical Redundant Supply Configuration

1

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

2

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PRODUCTION DATA information is current as of publication date.

Copyright © 2011–2013, Texas Instruments Incorporated

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.