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LM5050-1 Datasheet(PDF) 10 Page - Texas Instruments

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Part # LM5050-1
Description  High Side OR-ing FET Controller
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

LM5050-1 Datasheet(HTML) 10 Page - Texas Instruments

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PS1
PS2
IN
GATE
OUT
IN
GATE
OUT
RLOAD
CLOAD
LM5050-1
LM5050-1
GND
GND
VS
VS
PS1
PS2
RLOAD
CLOAD
LM5050-1, LM5050-1-Q1
SNVS629D – MAY 2011 – REVISED JUNE 2013
www.ti.com
APPLICATIONS INFORMATION
FUNCTIONAL DESCRIPTION
Systems that require high availability often use multiple, parallel-connected redundant power supplies to improve
reliability. Schottky OR-ing diodes are typically used to connect these redundant power supplies to a common
point at the load. The disadvantage of using OR-ing diodes is the forward voltage drop, which reduces the
available voltage and the associated power losses as load currents increase. Using an N-channel MOSFET to
replace the OR-ing diode requires a small increase in the level of complexity, but reduces, or eliminates, the
need for diode heat sinks or large thermal copper area in circuit board layouts for high power applications.
Figure 24. OR-ing with Diodes
The LM5050-1 is a positive voltage (i.e. high-side) OR-ing controller that will drive an external N-channel
MOSFET to replace an OR-ing diode. The voltage across the MOSFET source and drain pins is monitored by
the LM5050-1 at the IN and OUT pins, while the GATE pin drives the MOSFET to control its operation based on
the monitored source-drain voltage. The resulting behavior is that of an ideal rectifier with source and drain pins
of the MOSFET acting as the anode and cathode pins of a diode respectively.
Figure 25. OR-ing with MOSFETs
IN, GATE AND OUT PINS
When power is initially applied, the load current will flow from source to drain through the body diode of the
MOSFET. The resulting voltage across the body diode will be detected at the LM5050-1 IN and OUT pins which
then begins charging the MOSFET gate through a 32 µA (typical) charge pump current source . In normal
operation, the gate of the MOSFET is charged until it reaches the clamping voltage of the 12V GATE to IN pin
zener diode internal to the LM5050-1.
The LM5050-1 is designed to regulate the MOSFET gate- to -source voltage if the voltage across the MOSFET
source and drain pins falls below the VSD(REG) voltage of 22 mV (typical).
10
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Copyright © 2011–2013, Texas Instruments Incorporated
Product Folder Links: LM5050-1 LM5050-1-Q1


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