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TPD4E1U06 Datasheet(PDF) 3 Page - Texas Instruments |
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TPD4E1U06 Datasheet(HTML) 3 Page - Texas Instruments |
3 / 15 page TPD4E1U06 www.ti.com SLVSBQ9B – DECEMBER 2012 – REVISED FEBRUARY 2013 ABSOLUTE MAXIMUM RATINGS over operating free-air temperature range (unless otherwise noted) MIN MAX UNIT Operating temperature range –40 125 °C Storage temperature –65 155 °C IEC 61000-4-2 contact ESD ±15 kV IEC 61000-4-2 air-gap ESD ±15 kV IPP, peak pulse current (tp = 8/20 μs) 3 A PPP, peak pulse power (tp = 8/20 μs) 45 W ELECTRICAL CHARACTERISTICS over recommended operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITION MIN TYP MAX UNIT VRWM Reverse stand-off voltage IIO = 10 µA 5.5 V IPP = 1 A, tp = 8/20 μSec, from I/O to GND (1) 11 V Clamp voltage with ESD VCLAMP strike IPP = 3A, tp = 8/20 μSec, from I/O to GND (1) 15 V Pin x to GND Pin(2) 1.0 RDYN Dynamic resistance Ω GND to Pin x 0.6 CL Line capacitance f = 1 MHz, VBIAS = 2.5 V, 25 °C 0.8 1 pF DCK package 0.006 0.015 Channel to channel input Pin 2 = 0 V, f = 1 MHz, VBIAS = 2.5 V, between CCROSS pF capacitance channel pins DBV package 0.01 0.025 Variation of channel input Pin 2 = 0V , f = 1 MHz, VBIAS = 2.5 V, channel_x pin to gnd – channel_y pin to ∆CIO-TO-GND 0.025 0.07 pF capacitance gnd Break-down voltage, IO to VBR IIO = 1 mA 6.5 8.5 V GND ILEAK Leakage current VIO = 2.5 V 1 10 nA (1) Non-repetitive current pulse 8/20 us exponentially decaying waveform according to IEC61000-4-5 (2) Extraction of RDYN using least squares fit of TLP characteristics between I=10A and I=20A Copyright © 2012–2013, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Links: TPD4E1U06 |
Similar Part No. - TPD4E1U06_14 |
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