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| 2SK2723 |
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 NEC
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2 page 
2 2SK2723 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Drain to Source RDS (on) 1 VGS = 10 V, ID = 13 A 28 40 m Ω On-state Resistance RDS (on) 2 VGS = 4 V, ID = 13 A 45 60 m Ω Gate to Source Cutoff Voltage VGS (off) VDS = 10 V, ID = 1 mA 1.0 1.6 2.0 V Forward Transfer Admittance y fs VDS = 10 V, ID = 13 A 8.0 18 S Drain Leakage Current IDSS VDS = 60 V, VGS = 0 10 µA Gate to Source Leakage Current IGSS VGS = ±20 V, VDS = 0 ±10 µA Input Capacitance Ciss VDS = 10 V 830 pF Output Capacitance Coss VGS = 0 430 pF Reverse Transfer Capacitance Crss f = 1 MHz 185 pF Turn-On Delay Time td (on) ID = 13 A 21 ns Rise Time tr VGS (on) = 10 V 185 ns Turn-Off Delay Time td (off) VDD = 30 V 100 ns Fall Time tf RG = 10 Ω 110 ns Total Gate Charge QG ID = 25 A 35 nC Gate to Source Charge QGS VDD = 48 V 2.8 nC Gate to Drain Charge QGD VGS = 10 V 15 nC Body Diode Forward Voltage VF (S-D) IF = 25 A, VGS = 0 1.0 V Reverse Recovery Time tr r IF = 25 A, VGS = 0 60 ns Reverse Recovery Charge Qr r di/dt = 100 A/ µs 125 nC t = 1 s Duty Cycle ≤ 1 % VGS 0 RG VDD RL RG = 10 Ω VGS Wave Form VGS (on) ID td (on) ton toff tr td (on) tr 0 10 % 0 10 % 10 % 90 % 90 % 90 % ID Wave Form PG. D.U.T VDD RL 50 Ω PG. D.U.T t µ IG = 2 mA Test Circuit 1 Switching Time Test Circuit 2 Gate Charge VGS ID |
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