PESD5V0X1BQ_PESD5V0X1BT_1

© NXP B.V. 2008. All rights reserved.

Product data sheet

Rev. 01 — 30 October 2008

4 of 13

NXP Semiconductors

PESD5V0X1BQ; PESD5V0X1BT

Ultra low capacitance bidirectional ESD protection diodes

6.

Characteristics

[1]

Bidirectional configuration: measured from pin 1 to 2 or pin 2 to 1.

[2]

Unidirectional configuration: measured from pin 1 to 3 or pin 2 to 3.

Fig 1.

ESD pulse waveform according to IEC 61000-4-2

001aaa631

100 %

90 %

t

30 ns

60 ns

10 %

Table 9.

Characteristics

Symbol Parameter

Conditions

Min

Typ

Max

Unit

Per diode

reverse standoff

voltage

--5

V

-

1

100

nA

breakdown voltage

5.8

7.5

9.5

V

diode capacitance

f=1MHz

[1] -

0.9

1.3

pF

[2] -

2

2.6

pF

[1] -

0.8

1.2

pF

[2] -

1.7

2.3

pF

differential resistance

-

-

100

Ω