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ZTX658 Datasheet(PDF) 2 Page - List of Unclassifed Manufacturers |
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ZTX658 Datasheet(HTML) 2 Page - List of Unclassifed Manufacturers |
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2 / 3 page  NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ISSUE 2 – APRIL 2002 FEATURES * 400 Volt V CEO * 0.5 Amp continuous current *P tot=1 Watt APPLICATIONS * Telephone dialler circuits ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 400 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 5V Peak Pulse Current ICM 1A Continuous Collector Current IC 500 mA Power Dissipation at Tamb=25°C derate above 25°C Ptot 1 5.7 W mW/ °C Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 400 V IC=100µA Collector-Emitter Breakdown Voltage V(BR)CEO) 400 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 5V IE=100µA Collector Cut-Off Current ICBO 100 nA VCB=320V Collector Cut-Off Current ICBO 100 nA VCE=320V Emitter Cut-Off Current IEBO 100 nA VEB=4V Collector-Emitter Saturation Voltage VCE(sat) 0.3 0.25 0.5 V V V IC=20mA, IB=1mA IC=50mA, IB=5mA* IC=100mA, IB=10mA* Base-Emitter Saturation Voltage VBE(sat) 0.9 V IC=100mA, IB=10mA* Base-Emitter Turn On Voltage VBE(on) 0.9 V IC=100mA, VCE=5V* Static Forward Current Transfer Ratio hFE 50 50 40 IC=1mA, VCE=5V* IC=100mA, VCE=5V* IC=200mA, VCE=10V* E-Line TO92 Compatible 3-229 ZTX658 ZTX658 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Transition Frequency fT 50 MHz IC=20mA, VCE=20V f=20MHz Output capcitance Cobo 10 pF VCB=20V, f=1MHz Switching times ton toff 130 3300 ns ns IC=100mA, VC=100V IB1=10mA, IB2=-20mA * Measured under pulsed conditions. Pulse width=300 µs. Duty cycle ≤2% THERMAL CHARACTERISTICS PARAMETER SYMBOL MAX. UNIT Thermal Resistance:Junction to Ambient1 Junction to Ambient2 Junction to Case Rth(j-amb)1 Rth(j-amb)2 † Rth(j-case) 175 116 70 °C/W °C/W °C/W † Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. C B E -40 0.0001 Derating curve T -Temperature (°C) Maximum transient thermal impedance Pulse Width (seconds) 10 100 1 0.1 0.01 -20 0 20 40 60 80 100 120 200 180 160 140 0.001 0 100 200 D=0.2 D=0.1 Single Pulse D=0.5 t1 tP D=t1/tP 1.0 0.5 2.0 1.5 Case temperature 2.5 Ambient tem perat ure 0 D=1 (D.C.) 3-230 |
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