RS1PB, RS1PD, RS1PG, RS1PJ

www.vishay.com

Vishay General Semiconductor

Revision: 21-Aug-13

1

Document Number: 88934

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

High Current Density Surface Mount Glass Passivated

Fast Switching Rectifier

TYPICAL APPLICATIONS

For use in fast switching rectification of power supply,

inverters,

converters,

and

freewheeling

diodes

for

consumer, automotive and telecommunication.

FEATURES

• Very low profile - typical height of 1.0 mm

• Ideal for automated placement

• Glass passivated chip junction

• Fast switching for high efficiency

• Low thermal resistance

• High forward surge capability

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

• AEC-Q101 qualified

• Material categorization: For definitions of compliance

MECHANICAL DATA

Case: DO-220AA (SMP)



Molding compound meets UL 94 V-0 flammability rating

Base

P/N-M3

-

halogen-free,

RoHS-compliant,

and

commercial grade



Base

P/NHM3

-

halogen-free,

RoHS-compliant,

and

automotive grade

Terminals:

Matte

tin

plated

leads,

solderable

per

J-STD-002 and JESD 22-B102



M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix

meets JESD 201 class 2 whisker test

Polarity: Color band denotes the cathode end

Notes

 40 ms

PRIMARY CHARACTERISTICS

1.0 A

100 V, 200 V, 400 V, 600 V

30 A

150 ns, 250 ns

1 μA

1.3

150 °C

Package

DO-220AA (SMP)

Diode variation

Single die

DO-220AA (SMP)

eSMP

Available

PARAMETER

SYMBOL

RS1PB

RS1PD

RS1PG

RS1PJ

UNIT

Device marking code

RB

RD

RG

RJ

Maximum repetitive peak reverse voltage

100

200

400

600

V

Maximum average forward rectified current (fig. 1)

1.0

A

Peak forward surge current 10 ms single half sine-wave superimposed



on rated load

30

A

Operating junction and storage temperature range

- 55 to + 150

°C

PARAMETER

TEST CONDITIONS

SYMBOL

RS1PB

RS1PD

RS1PG

RS1PJ

UNIT

Maximum instantaneous forward voltage

1.3

V

Maximum reverse current at rated



1.0

μA

60

Maximum reverse recovery time

150

250

ns

Typical junction capacitance

4.0 V, 1 MHz

9pF