NTTS2P03R2G datasheet(4/6 Pages) ONSEMI

Part #	NTTS2P03R2G

Description	Power MOSFET ??.48 Amps, ??0 Volts

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Manufacturer	ONSEMI [ON Semiconductor]

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NTTS2P03R2

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4

tr

GATE−TO−SOURCE OR DRAIN−TO−SOURCE

VOLTAGE (VOLTS)

td (off)

Figure 7. Capacitance Variation

Figure 8. Gate−to−Source and

Drain−to−Source Voltage versus Total Charge

Figure 9. Resistive Switching Time Variation

versus Gate Resistance

Figure 10. Diode Forward Voltage

versus Current

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

Figure 12. Diode Reverse Recovery Waveform

VDS = 0 V

VGS = 0 V

TJ = 25°C

Ciss

Crss

Coss

Ciss

Crss

VDD = −24 V

ID = −2.48 A

VGS = −10 V

tf

td (on)

VGS = 0 V

TJ = 25°C

di/dt

trr

ta

tp

IS

0.25 IS

TIME

IS

tb

1

0

0.9

0.8

0.7

0.6

0.5

0.4

0.5

1

1.5

2.5

3

−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

1

100

10

1

10

100

RG, GATE RESISTANCE (OHMS)

30

−10

1200

1000

−5

0

5

10

15

800

600

200

0

−VDS

−VGS

QT

Q2

Q1

VGS

ID = −2.48 A

TJ = 25°C

VDS

0

8

0

3

6

1

4

24

6

10

16

Qg, TOTAL GATE CHARGE (nC)

30

25

20

15

10

5

0

12

2

0.1

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

0.01

1

RDS(on) LIMIT

THERMAL LIMIT

PACKAGE LIMIT

VGS = 30 V

SINGLE PULSE

TC = 25°C

10

dc

1

100

10

10 ms

1 ms

0.1

20

25

400

14

5

2

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NTTS2P03R2G Datasheet(PDF) 4 Page - ON Semiconductor

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