© 2010 Fairchild Semiconductor Corporation

www.fairchildsemi.com

PN2222A / MMBT2222A / PZT2222A Rev. A3

1

August 2010

PN2222A / MMBT2222A / PZT2222A

NPN General Purpose Amplifier

Features

• This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA.

• Sourced from process 19.

* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These rating are based on a maximum junction temperature of 150 degrees C.

2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle

operations.

* Device mounted on FR-4 PCB 1.6”

× 1.6” × 0.06”.

** Device mounted on FR-4 PCB 36mm

Symbol

Parameter

Value

Units

Collector-Emitter Voltage

40

V

Collector-Base Voltage

75

V

Emitter-Base Voltage

6.0

V

Collector Current

1.0

A

Operating and Storage Junction Temperature Range

- 55 ~ 150

°C

Symbol

Parameter

Max.

Units

PN2222A

*MMBT2222A

**PZT2222A

Total Device Dissipation

Derate above 25

°C

625

5.0

350

2.8

1,000

8.0

mW

mW/

°C

Thermal Resistance, Junction to Case

83.3

°C/W

Thermal Resistance, Junction to Ambient

200

357

125

°C/W

PN2222A

MMBT2222A

PZT2222A

EB C

TO-92

SOT-23

SOT-223

Mark:1P

C

B

E

E

B

C

C