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2SK3105 Datasheet(PDF) 1 Page - NEC |
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2SK3105 Datasheet(HTML) 1 Page - NEC |
1 / 8 page The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. © 1998, 1999 MOS FIELD EFFECT TRANSISTOR 2SK3105 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DATA SHEET Document No. D13293EJ1V0DS00 (1st edition) Date Published June 1999 NS CP(K) Printed in Japan DESCRIPTION The 2SK3105 is a switching device which can be driven directly by a 4 V power source. The 2SK3105 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • Can be driven by a 4 V power source • Low on-state resistance RDS(on)1 = 95 m Ω MAX. (VGS = 10 V, ID = 1.5 A) RDS(on)2 = 135 m Ω MAX. (VGS = 4.5 V, ID = 1.5 A) RDS(on)3 = 150 m Ω MAX. (VGS = 4.0 V, ID = 1.5 A) ORDERING INFORMATION PART NUMBER PACKAGE 2SK3105 3-pin Mini Mold (Thin Type) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage VDSS 30 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID(DC) ±2.5 A Drain Current (pulse) Note1 ID(pulse) ±10 A Total Power Dissipation PT1 0.2 W Total Power Dissipation Note2 PT2 1.25 W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to +150 °C Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2. Mounted on FR4 Board, t ≤ 5 sec. Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. PACKAGE DRAWING (Unit : mm) 0.65 0.9 to 1.1 0 to 0.1 0.16 +0.1 –0.06 0.95 1 2 3 1.9 2.9 ±0.2 0.4 +0.1 –0.05 0.95 1 : Gate 2 : Source 3 : Drain EQUIVALENT CIRCUIT Source Body Diode Gate Protection Diode Marking: XA Gate Drain |
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