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STD11N65M5 Datasheet(PDF) 4 Page - STMicroelectronics |
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STD11N65M5 Datasheet(HTML) 4 Page - STMicroelectronics |
4 / 25 page Electrical characteristics STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5 4/25 Doc ID 022864 Rev 2 2 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 5. On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 1 mA, VGS = 0 650 V IDSS Zero gate voltage drain current (VGS = 0) VDS = 650 V VDS = 650 V, TC=125 °C 1 100 µA µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 25 V ± 100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 5 V RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 4.5 A 0.43 0.48 Ω Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 100 V, f = 1 MHz, VGS = 0 - 644 18 2.5 - pF pF pF Co(tr) (1) 1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Equivalent capacitance time related VDS = 0 to 520 V, VGS = 0 -55 - pF Co(er) (2) 2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS Equivalent capacitance energy related -17 - pF RG Intrinsic gate resistance f = 1 MHz open drain - 5 - Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 520 V, ID = 4.5 A, VGS = 10 V (see Figure 20) - 17 4.6 8.5 - nC nC nC |
Similar Part No. - STD11N65M5 |
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Similar Description - STD11N65M5 |
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