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| 2SK3111 |
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 NEC
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2 page 
Data Sheet D13334EJ1V0DS00 2 2SK3111 ELECTRICAL CHARACTERISTICS (TA = 25 °C) Characteristics Symbol Test Conditions MIN. TYP. MAX. Unit Drain Leakage Current IDSS VDS = 200 V, VGS = 0 V 100 µA Gate Leakage Current IGSS VGS = ±30 V, VDS = 0 V ±10 µA Gate to Source Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA 2.5 4.5 V Forward Transfer Admittance | yfs |VDS = 10 V, ID = 10 A 3.0 S Drain to Source On-state Resistance RDS(on) VGS = 10 V, ID = 10 A 120 180 m Ω Input Capacitance Ciss VDS = 10 V 1000 pF Output Capacitance Coss VGS = 0 V 300 pF Reverse Transfer Capacitance Crss f = 1 MHz 150 pF Turn-on Delay Time td(on) VDD = 100 V 25 ns Rise Time tr ID = 10 A 90 ns Turn-off Delay Time td(off) VGS(on) = 10 V 80 ns Fall Time tf RG = 10 Ω 40 ns Total Gate Charge QG VDD = 160 V 40 nC Gate to Source Charge QGS VGS = 10 V 7 nC Gate to Drain Charge QGD ID = 20 A 25 nC Diode Forward Voltage VF(S-D) IF = 20 A, VGS = 0 V 1.0 V Reverse Recovery Time trr IF = 20 A, VGS = 0 V 300 ns Reverse Recovery Charge Qrr di/dt = 50 A/ µs1.7 µC BVDSS TEST CIRCUIT 3 GATE CHARGE VGS = 20 → 0 V PG. RG = 25 Ω 50 Ω D.U.T. L VDD TEST CIRCUIT 1 AVALANCHE CAPABILITY PG. RG = 10 Ω D.U.T. RL VDD TEST CIRCUIT 2 SWITCHING TIME RG PG. IG = 2 mA 50 Ω D.U.T. RL VDD ID VDD IAS VDS Starting Tch VGS 0 τ = 1 µs Duty Cycle ≤ 1 % τ VGS Wave Form ID Wave Form VGS ID 10 % 0 0 90 % 90 % 90 % VGS(on) ID ton toff td(on) tr td(off) tf 10 %10 % |
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