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1SMA12AT3G Datasheet(PDF) 2 Page - ON Semiconductor |
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1SMA12AT3G Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 5 page 1SMA5.0AT3G Series, SZ1SMA5.0AT3G Series http://onsemi.com 2 MAXIMUM RATINGS Rating Symbol Value Unit Peak Power Dissipation (Note 1) @ TL = 25C, Pulse Width = 1 ms PPK 400 W DC Power Dissipation @ TL = 75C Measured Zero Lead Length (Note 2) Derate Above 75C Thermal Resistance from Junction to Lead PD RqJL 1.5 20 50 W mW/C C/W DC Power Dissipation (Note 3) @ TA = 25C Derate Above 25C Thermal Resistance from Junction to Ambient PD RqJA 0.5 4.0 250 W mW/C C/W Forward Surge Current (Note 4) @ TA = 25C IFSM 40 A Operating and Storage Temperature Range TJ, Tstg −65 to +150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. 10 X 1000 ms, non−repetitive. 2. 1 square copper pad, FR−4 board. 3. FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403B case outline dimensions spec. 4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum. ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, VF = 3.5 V Max. @ IF = 30 A for all types) (Note 5) Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM Working Peak Reverse Voltage IR Maximum Reverse Leakage Current @ VRWM VBR Breakdown Voltage @ IT IT Test Current IF Forward Current VF Forward Voltage @ IF 5. 1/2 sine wave or equivalent, PW = 8.3 ms, non−repetitive duty cycle. Uni−Directional TVS IPP IF V I IR IT VRWM VC VBR VF |
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