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TISP4395H3 Datasheet(PDF) 3 Page - Bourns Electronic Solutions |
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TISP4395H3 Datasheet(HTML) 3 Page - Bourns Electronic Solutions |
3 / 13 page NOVEMBER 1997 - REVISED JANUARY 2010 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP4xxxH3LM Overvoltage Protector Series Description (Continued) This TISP4xxxH3LM range consists of seventeen voltage variants to meet various maximum system voltage levels (58 V to 320 V). They are guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These protection devices are supplied in a DO-92 (LM) cylindrical plastic package. The TISP4xxxH3LM is a straight lead DO-92 supplied in bulk pack and on tape and reel. The TISP4xxxH3LMF is a formed lead DO-92 supplied only on tape and reel. For lower rated impulse currents in the DO-92 package, the 50 A 10/1000 TISP4xxxM3LM series is available. Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted) Rating Symbol Value Unit Repetitive peak off-state voltage, (see Note 1) ‘4070 ‘4080 ‘4095 ‘4115 ‘4125 ‘4145 ‘4165 ‘4180 ‘4220 ‘4240 ‘4250 ‘4260 ‘4290 ‘4300 ‘4350 ‘4395 ‘4400 VDRM ± 58 ± 65 ± 75 ± 90 ±100 ±120 ±135 ±145 ±160 ±180 ±190 ±200 ±220 ±230 ±275 ±320 ±300 V Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4) ITSP A 2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape) 500 8/20 µs (IEC 61000-4-5, combination wave generator, 1.2/50 voltage, 8/20 current) 300 10/160 µs (FCC Part 68, 10/160 µs voltage wave shape) 250 5/200 µs (VDE 0433, 10/700 µs voltage wave shape) 220 0.2/310 µs (I 31-24, 0.5/700 µs voltage wave shape) 200 5/310 µs (ITU-T K20/21, 10/700 µs voltage wave shape) 200 5/310 µs (FTZ R12, 10/700 µs voltage wave shape) 200 5/320 µs (FCC Part 68, 9/720 µs voltage wave shape) 200 10/560 µs (FCC Part 68, 10/560 µs voltage wave shape) 160 10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape) 100 Non-repetitive peak on-state current (see Notes 2, 3 and 5) ITSM 55 60 2.3 A 20 ms (50 Hz) full sine wave 16.7 ms (60 Hz) full sine wave 1000 s 50 Hz/60 Hz a.c. Initial rate of rise of on-state current, Exponential current ramp, Maximum ramp value < 100 A diT/dt 400 A/µs Junction temperature TJ -40 to +150 °C Storage temperature range Tstg -65 to +150 °C NOTES: 1. See Applications Information and Figure 10 for voltage values at lower temperatures. 2. Initially, the TISP4xxxH3LM must be in thermal equilibrium with TJ =25 °C. 3. The surge may be repeated after the TISP4xxxH3LM returns to its initial conditions. 4. See Applications Information and Figure 11 for current ratings at other temperatures. 5. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring track widths. See Figure 8 for the current ratings at other durations. Derate current values at -0.61 %/°C for ambient temperatures above 25 °C. OBSOLET E |
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