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MBM29DL161BE70PFTN Datasheet(PDF) 1 Page - Fujitsu Component Limited. |
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MBM29DL161BE70PFTN Datasheet(HTML) 1 Page - Fujitsu Component Limited. |
1 / 76 page DS05-20874-4E FUJITSU SEMICONDUCTOR DATA SHEET FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT Dual Operation MBM29DL16XTD/BD -70/90/12 s FEATURES • 0.33 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1) Host system can program or erase in one bank, then immediately and simultaneously read from the other bank Zero latency between read and write operations Read-while-erase Read-while-program • Single 3.0 V read, program, and erase Minimizes system level power requirements (Continued) s PRODUCT LINE UP s PACKAGES Part No. MBM29DL16XTD/MBM29DL16XBD Ordering Part No. VCC = 3.3 V +0.3 V –0.3 V 70 — — VCC = 3.0 V +0.6 V –0.3 V —90 12 Max. Address Access Time (ns) 70 90 120 Max. CE Access Time (ns) 70 90 120 Max. OE Access Time (ns) 30 35 50 48-pin plastic TSOP (I) (FPT-48P-M19) 48-pin plastic TSOP (I) (FPT-48P-M20) 48-pin plastic FBGA (BGA-48P-M13) Marking Side Marking Side Embedded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc. |
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