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CLD171R Datasheet(PDF) 1 Page - New Jersey Semi-Conductor Products, Inc.

Part # CLD171R
Description  Large Active Area Silicon Planar photodiode
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Manufacturer  NJSEMI [New Jersey Semi-Conductor Products, Inc.]
Direct Link  http://www.njsemi.com
Logo NJSEMI - New Jersey Semi-Conductor Products, Inc.

CLD171R Datasheet(HTML) 1 Page - New Jersey Semi-Conductor Products, Inc.

  CLD171R Datasheet HTML 1Page - New Jersey Semi-Conductor Products, Inc.  
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Clairex Technologies, Inc.
1301 East Plano Parkway
Plano, Texas 75074-8524
Phone: 972-265-4900
Fax: 972-265-4949
www.clairex.com
Clairex reserves the right to make changes at any time to improve design and to provide the best possible product.
CLD171
Large Active Area
Silicon Planar photodiode
Clairex
Technologies, Inc.
September, 2002
features
• 130° acceptance angle
• 860nm peak response
• 125°C operating temperature
• usable for visible through near-IR
description
The CLD171 and CLD171R, are
0.122" x 0.122" active area silicon
photodiodes featuring high linearity
and low dark current. They are
epoxy encapsulated for lower cost
applications. Wide acceptance
angle permits use in IR air
communications, ambient light
detection, safety and monitoring,
security systems, etc.
absolute maximum ratings (TA = 25°C unless otherwise stated)
storage temperature........................................................................-40°C to +125°C
operating temperature.....................................................................-40°C to +125°C
lead soldering temperature
(1) ..........................................................................260°C
reverse voltage ...................................................................................................30V
continuous power dissipation
(2) ....................................................................200mW
notes:
1.
0.06” (1.5mm) from the header for 5 seconds maximum.
2.
Derate linearly 1.6mW/°C free air temperature to TA = +125°C.
If higher operating temperature is required, see the CLD160.
®
electrical characteristics (TA = 25°C unless otherwise noted)
symbol
parameter
min
typ
max
units
test conditions
ISC
Short-circuit current(3)
-
70
-
µA
VBIAs =0V, Ee = 5mW/cm
2
-
-
10
nA
VF = 100mV, Ee = 0
ID
Dark current
-
-
5.0
nA
VR = 15V, Ee = 0
VO
Open circuit voltage(3)
-
0.35
-
V
Ee = 5mW/cm
2
VBR
Reverse breakdown
25
-
-
V
IR = 100µA
CJ
Junction capacitance
-
-
200
pF
VBIAS = 0V, f = 1MHz
tr, tf
Output rise and fall time
(4)
-
-
12
µs
RL = 1kΩ
ΘHP
Total angle at half sensitivity points
-
130
-
deg.
note
: 3. Radiation source is a frosted tungsten lamp at a color temperature of 2854K or equivalent.
4.
Radiation source is an AlGaAs IRED operating at a peak emission wavelength of 880nm and Ee = 20mW/cm
2.
0.288 (7.32)
0.278 (7.06)
0.253 (6.43)
0.243 (6.17)
1.00 (25.4) min.
ANODE
CATHODE
0.200 (5.08)
0.080 (2.03)
0.070 (1.78)
0.065 (1.65) max
Case 13
Anode lead is identified by red dot on side of substrate.
ALL DIMENSIONS ARE IN INCHES (MILLIMETERS)
Revised 3/15/06
This product is tested to satisfy the
conditions of both the CLD171 and
the CLD171R.


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