Data Sheet D14132EJ2V0DS00

7

2SK3355

PACKAGE DRAWINGS (Unit: mm)

1)

TO-220AB(MP-25)

4.8 MAX.

1.Gate

2.Drain

3.Source

4.Fin (Drain)

1 2 3

10.6 MAX.

10.0

3.6±0.2

4

1.3±0.2

0.75±0.1

2.54 TYP.

2.54 TYP.

1.3±0.2

0.5±0.2

2.8±0.2

φ

2) TO-262(MP-25 Fin Cut)

4.8 MAX.

1.Gate

2.Drain

3.Source

4.Fin (Drain)

1

2

3

(10)

4

1.3±0.2

0.75±0.3

2.54 TYP.

2.54 TYP.

1.3±0.2

0.5±0.2

2.8±0.2

3)

TO-263 (MP-25ZJ)

(10)

1.4±0.2

2.54 TYP.

2.54 TYP.

123

4

4.8 MAX.

1.3±0.2

0.5±0.2

(0.5R)

(0.8R)

1.Gate

2.Drain

3.Source

4.Fin (Drain)

0.7±0.2

4) TO-220SMD(MP-25Z)

Note

(10)

1.4±0.2

2.54 TYP.

2.54 TYP.

123

4

4.8 MAX.

1.3±0.2

0.5±0.2

(0.5R)

(0.8R)

1.Gate

2.Drain

3.Source

4.Fin (Drain)

1.0±0.3

Note This Package is produced only in Japan.

EQUIVALENT CIRCUIT

Source

Body

Diode

Gate

Protection

Diode

Gate

Drain

Remark

The diode connected between the gate and source of the transistor

serves as a protector against ESD. When this device actually used,

an additional protection circuit is externally required if a voltage

exceeding the rated voltage may be applied to this device.