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MBM29F160TE-90PFTN Datasheet(PDF) 2 Page - Fujitsu Component Limited. |
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MBM29F160TE-90PFTN Datasheet(HTML) 2 Page - Fujitsu Component Limited. |
2 / 53 page MBM29F160TE-55/-70/-90/MBM29F160BE-55/-70/-90 2 (Continued) The MBM29F160TE/BE is programmed by executing the program command sequence. This will invoke the Embedded ProgramTM* Algorithm which is an internal algorithm that automatically times the program pulse widths and verifies proper cell margins. Typically, each sector can be programmed and verified in about 0.5 seconds. Erase is accomplished by executing the erase command sequence. This will invoke the Embedded EraseTM* Algorithm which is an internal algorithm that automatically preprograms the array if it is not already programmed before executing the erase operation. During erase, the device automatically times the erase pulse widths and verifies proper cell margins. Any individual sector is typically erased and verified in 1.0 second. (If already preprogrammed.) The device also features a sector erase architecture. The sector mode allows each sector to be erased and reprogrammed without affecting other sectors. The MBM29F160TE/BE is erased when shipped from the factory. The device features single 5.0 V power supply operation for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. A low VCC detector automatically inhibits write operations on the loss of power. The end of program or erase is detected by Data Polling of DQ7, by the Toggle Bit feature on DQ6, or the RY/BY output pin. Once the end of a program or erase cycle has been comleted, the device internally resets to the read mode. The MBM29F160TE/BE also has a hardware RESET pin. When this pin is driven low, execution of any Embedded Program Algorithm or Embedded Erase Algorithm is terminated. The internal state machine is then reset to the read mode. The RESET pin may be tied to the system reset circuitry. Therefore, if a system reset occurs during the Embedded Program Algorithm or Embedded Erase Algorithm, the device is automatically reset to the read mode and will have erroneous data stored in the address locations being programmed or erased. These locations need re-writing after the Reset. Resetting the device enables the system’s microprocessor to read the boot-up firmware from the Flash memory. Fujitsu’s Flash technology combines years of Flash memory manufacturing experience to produce the highest levels of quality, reliability, and cost effectiveness. The MBM29F160TE/BE memory electrically erases all bits within a sector simultaneously via Fowler-Nordhiem tunneling. The bytes/words are programmed one byte/word at a time using the EPROM programming mechanism of hot electron injection. * : Embedded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc. |
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