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MBM29LV016T-12PTN Datasheet(PDF) 1 Page - Fujitsu Component Limited. |
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MBM29LV016T-12PTN Datasheet(HTML) 1 Page - Fujitsu Component Limited. |
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1 / 52 page  DS05-20855-4E FUJITSU SEMICONDUCTOR DATA SHEET FLASH MEMORY CMOS 16M (2M × 8) BIT MBM29LV016T-80/-90/-12/MBM29LV016B-80/-90/-12 s FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard world-wide pinouts 40-pin TSOP (I) (Package suffix: PTN-Normal Bend Type, PTR-Reversed Bend Type) • Minimum 100,000 program/erase cycles • High performance 80 ns maximum access time • Sector erase architecture One 16K byte, two 8K bytes, one 32K byte, and thirty-one 64K byte sectors in byte mode Any combination of sectors can be concurrently erased. Also supports full chip erase • Boot Code Sector Architecture T = Top sector B = Bottom sector • Embedded EraseTM Algorithms Automatically pre-programs and erases the chip or any sector • Embedded programTM Algorithms Automatically programs and verifies data at specified address •Data Polling and Toggle Bit feature for detection of program or erase cycle completion • Ready/Busy output (RY/BY) Hardware method for detection of program or erase cycle completion • Automatic sleep mode When addresses remain stable, automatically switches themselves to low power mode •Low VCC write inhibit ≤ 2.5 V • Erase Suspend/Resume Suspends the erase operation to allow a read data and/or program in another sector within the same device • Sector protection Hardware method disables any combination of sectors from program or erase operations • Sector Protection set function by Extended sector protect command • Temporary sector unprotection Temporary sector unprotection via the RESET pin • In accordance with CFI (Common Flash Memory Interface) Embedded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc. |
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