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FQD8P10TF Datasheet(PDF) 4 Page - Fairchild Semiconductor |
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FQD8P10TF Datasheet(HTML) 4 Page - Fairchild Semiconductor |
4 / 9 page ©2010 Fairchild Semiconductor Corporation FQD8P10 / FQU8P10 Rev. C0 www.fairchildsemi.com 4 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -1 10 0 ※ N o te s : 1 . Z θ JC(t ) = 2 . 8 4 /W M a x . ℃ 2 . D u ty F a c to r , D = t 1 /t 2 3 . T JM - T C = P DM * Z θ JC(t ) sin g le p u ls e D= 0 .5 0.0 2 0.2 0.05 0.1 0.01 t 1 , S q u a r e W a v e P u l s e D u r a ti o n [s e c ] 25 50 75 100 125 150 0 1 2 3 4 5 6 7 T C, Case Temperature [ ] ℃ 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 DC 10 ms 1 ms 100 s Operation in This Area is Limited by R DS(on) ※ Notes : 1. T C = 25 oC 2. T J = 150 oC 3. Single Pulse -V DS, Drain-Source Voltage [V] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 ※ Notes : 1. V GS = -10 V 2. I D = -3.3 A T J, Junction Temperature [ oC] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 ※ Notes : 1. V GS = 0 V 2. I D = -250 μ A T J, Junction Temperature [ oC] Typical Characteristics (Continued) Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature Figure 11. Transient Thermal Response Curve t1 PDM t2 |
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