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MBM29LV160TE70PCV Datasheet(PDF) 1 Page - Fujitsu Component Limited. |
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MBM29LV160TE70PCV Datasheet(HTML) 1 Page - Fujitsu Component Limited. |
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1 / 59 page  DS05-20883-2E FUJITSU SEMICONDUCTOR DATA SHEET FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT MBM29LV160TE/BE -70/90/12 s GENERAL DESCRIPTION The MBM29LV160TE/BE is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29LV160TE/BE is offered in a 48-pin TSOP (I), 48-pin CSOP and 48-ball FBGA packages. The device is designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The device can also be reprogrammed in standard EPROM programmers. The standard MBM29LV160TE/BE offers access times of 70 ns, 90 ns and 120 ns, allowing operation of high- speed microprocessors without wait states. To eliminate bus contention the device has separate chip enable (CE), write enable (WE), and output enable (OE) controls. The MBM29LV160TE/BE is pin and command set compatible with JEDEC standard E2PROMs. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 5.0 V and 12.0 V Flash or EPROM devices. The MBM29LV160TE/BE is programmed by executing the program command sequence. This will invoke the Embedded ProgramTM* Algorithm which is an internal algorithm that automatically times the program pulse widths and verifies proper cell margins. Typically, each sector can be programmed and verified in about 0.5 seconds. Erase is accomplished by executing the erase command sequence. This will invoke the Embedded EraseTM* Algorithm which is an internal algorithm that automatically preprograms the array if it is not already programmed before executing the erase operation. During erase, the device automatically times the erase pulse widths and verifies proper cell margins. Any individual sector is typically erased and verified in 1.0 second. (If already preprogrammed.) within a sector simultaneously via Fowler-Nordhiem tunneling. The bytes/words are programmed one byte/word at a time using the EPROM programming mechanism of hot electron injection. (Continued) s PRODUCT LINE UP Part No. MBM29LV160TE/160BE Ordering Part No. VCC = 3.3 V 70 — — VCC = 3.0 V —90 12 Max. Address Access Time (ns) 70 90 120 Max. CE Access Time (ns) 70 90 120 Max. OE Access Time (ns) 30 35 50 +0.3 V –0.3 V +0.6 V –0.3 V |
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