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1N4151 Datasheet(PDF) 1 Page - General Semiconductor |
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1N4151 Datasheet(HTML) 1 Page - General Semiconductor |
1 / 4 page 1N4151 SMALL SIGNAL DIODES FEATURES ¨ Silicon Epitaxial Planar Diode ¨ Fast switching diode. ¨ This diode is also available in other case styles including the SOD-123 case with the type designation 1N4151W and the Mini-MELF case with the type designation LL4151. MECHANICAL DATA Case: DO-35 Glass Case Weight: approx. 0.13 g MAXIMUM RATINGS Ratings at 25¡C ambient temperature unless otherwise specified. SYMBOL VALUE UNIT Reverse Voltage VR 50 Volts Peak Reverse Voltage VRM 75 Volts Rectified Current (Average) Half Wave Rectification with Resist. Load IO 150(1) mA at Tamb = 25 ¡C and f ³ 50 Hz Surge Forward Current at t < 1s and Tj = 25¡C IFSM 500 mA Power Dissipation at Tamb = 25¡C Ptot 500(1) mW Junction Temperature Tj 175 ¡C Storage Temperature Range TS Ð 65 to +175 ¡C NOTES: (1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature Dimensions in inches and (millimeters) DO-35 max. ÆŸ Cathode .020 (0.52) Mark max. ÆŸ.079 (2.0) 1/4/99 Dimensions in inches and (millimeters) |
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