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BAS70-04 Datasheet(PDF) 1 Page - General Semiconductor |
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BAS70-04 Datasheet(HTML) 1 Page - General Semiconductor |
1 / 2 page FEATURES Schottky Diodes Dimensions in inches and (millimeters) .016 (0.4) .037(0.95) .037(0.95) .122 (3.1) .016 (0.4) .016 (0.4) 3 12 Top View .102 (2.6) .118 (3.0) .094 (2.4) Case: SOT-23 Plastic Package Weight: approx. 0.008 g MECHANICAL DATA MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS FOR ONE DIODE Ratings at 25 °C ambient temperature unless otherwise specified SOT-23 4/98 BAS70 1 3 2 Top View 1 3 2 BAS70-04 Marking: 73 Marking: 74 1 3 2 Top View 1 3 2 BAS70-05 BAS70-06 Marking: 75 Marking: 76 BAS70 THRU BAS70-06 Symbol Value Unit Repetitive Peak Reverse Voltage VRRM 70 V Forward Continuous Current at Tamb = 25 °C IF 2001) mA Surge Forward Current at tp <1 s, Tamb = 25 °C IFSM 6001) mA Power Dissipation1) at Tamb = 25 °C Ptot 2001) mW Junction Temperature Tj 150 °C Storage Temperature Range TS –55 to +150 °C 1) Device on fiberglass substrate, see layout These diodes feature very low turn-on voltage and fast switching. These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic dis- charges. ♦ ♦ |
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