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BC847B Datasheet(PDF) 2 Page - General Semiconductor |
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BC847B Datasheet(HTML) 2 Page - General Semiconductor |
2 / 6 page ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Min. Typ. Max. Unit h-Parameters at VCE = 5 V, IC = 2 mA, f = 1 kHz, Small Signal Current Gain Current Gain Group A B C Input Impedance Current Gain Group A B C Output Admittance Current Gain Group A B C Reverse Voltage Transfer Ratio Current Gain Group A B C hfe hfe hfe hie hie hie hoe hoe hoe hre hre hre – – – 1.6 3.2 6 – – – – – – 220 330 600 2.7 4.5 8.7 18 30 60 1.5 · 10–4 2 · 10–4 3 · 10–4 – – – 4.5 8.5 15 30 60 110 – – – – – – k Ω k Ω k Ω µS µS µS – – – DC Current Gain at VCE = 5 V, IC = 10 µA Current Gain Group A B C at VCE = 5 V, IC = 2 mA Current Gain Group A B C hFE hFE hFE hFE hFE hFE – – – 110 200 420 90 150 270 180 290 520 – – – 220 450 800 – – – – – – Thermal Resistance Junction to Substrate Backside RthSB – – 3201) K/W Thermal Resistance Junction to Ambient Air RthJA – – 4501) K/W Collector Saturation Voltage at IC = 10 mA, IB = 0.5 mA at IC = 100 mA, IB = 5 mA VCEsat VCEsat – – 90 200 250 600 mV mV Base Saturation Voltage at IC = 10 mA, IB = 0.5 mA at IC = 100 mA, IB = 5 mA VBEsat VBEsat – – 700 900 – – mV mV Base-Emitter Voltage at VCE = 5 V, IC = 2 mA at VCE = 5 V, IC = 10 mA VBE VBE 580 – 660 – 700 720 mV mV Collector-Emitter Cutoff Current at VCE = 80 V BC846 at VCE = 50 V BC847 at VCE = 30 V BC848, BC849 at VCE = 80 V, Tj = 125 °C BC846 at VCE = 50 V, Tj = 125 °C BC847 at VCE = 30 V, Tj = 125 °C BC848, BC849 ICES ICES ICES ICES ICES ICES – – – – – – 0.2 0.2 0.2 – – – 15 15 15 4 4 4 nA nA nA µA µA µA Gain-Bandwidth Product at VCE = 5 V, IC = 10 mA, f = 100 MHz fT – 300 – MHz 1) Device on fiberglass substrate, see layout BC846 THRU BC849 |
Similar Part No. - BC847B |
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Similar Description - BC847B |
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