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BS123 Datasheet(PDF) 2 Page - General Semiconductor

Part # BS123
Description  DMOS Transistors (N-Channel)
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Manufacturer  GE [General Semiconductor]
Direct Link  http://www.vishay.com
Logo GE - General Semiconductor

BS123 Datasheet(HTML) 2 Page - General Semiconductor

  BS123 Datasheet HTML 1Page - General Semiconductor BS123 Datasheet HTML 2Page - General Semiconductor  
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ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
BS123
Symbol
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
at ID = 100 µA, VGS = 0 V
V(BR)DSS
60
80
V
Gate-Body Leakage Current, Forward
at VGSF = 20 V, VDS = 0 V
IGSSF
500
nA
Gate-Body Leakage Current, Reverse
at VGSR = 20 V, VDS = 0 V
IGSSR
500
nA
Drain Cutoff Current
at VDS = 60 V, VGS = 0 V
IDSS
250
µA
Gate-Source Threshold Voltage
at VGS = VDS, ID = 250 µA
VGS(th)
11.5
3
V
Drain-Source ON Resistance
at VGS = 10 V, ID = 600 mA
RDS(on)
–0.3
0.4
Capacitance
at VDS = 25 V, VGS = 0 V, f = 1 MHz
Input Capacitance
Output Capacitance
Feedback Capacitance
CiSS
COSS
CrSS
350
150
35
pF
pF
pF
Switching Times
at VGS = 10 V, VDS = 10 V, RD = 100 Ω
Turn-On Time
Turn-Off Time
ton
toff
40
100
ns
ns
Thermal Resistance Junction to Ambient Air
RthJA
1501)
K/W
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case (for TO-92).
Inverse Diode
Symbol
Value
Unit
Max. Forward Current (continuous)
at Tamb = 25 °C
IF
1.1
A
Forward Voltage Drop (typ.)
at VGS = 0 V, IF = 1.1 A, Tj = 25 °C
VF
1V


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