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BS123 Datasheet(PDF) 2 Page - General Semiconductor |
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BS123 Datasheet(HTML) 2 Page - General Semiconductor |
2 / 2 page ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified BS123 Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage at ID = 100 µA, VGS = 0 V V(BR)DSS 60 80 – V Gate-Body Leakage Current, Forward at VGSF = 20 V, VDS = 0 V IGSSF – – 500 nA Gate-Body Leakage Current, Reverse at VGSR = 20 V, VDS = 0 V IGSSR – – 500 nA Drain Cutoff Current at VDS = 60 V, VGS = 0 V IDSS – – 250 µA Gate-Source Threshold Voltage at VGS = VDS, ID = 250 µA VGS(th) 11.5 3 V Drain-Source ON Resistance at VGS = 10 V, ID = 600 mA RDS(on) –0.3 0.4 Ω Capacitance at VDS = 25 V, VGS = 0 V, f = 1 MHz Input Capacitance Output Capacitance Feedback Capacitance CiSS COSS CrSS – – – 350 150 35 – – – pF pF pF Switching Times at VGS = 10 V, VDS = 10 V, RD = 100 Ω Turn-On Time Turn-Off Time ton toff – – 40 100 – – ns ns Thermal Resistance Junction to Ambient Air RthJA – – 1501) K/W 1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case (for TO-92). Inverse Diode Symbol Value Unit Max. Forward Current (continuous) at Tamb = 25 °C IF 1.1 A Forward Voltage Drop (typ.) at VGS = 0 V, IF = 1.1 A, Tj = 25 °C VF 1V |
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