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RB551SS-30T2R Datasheet(PDF) 1 Page - Rohm |
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RB551SS-30T2R Datasheet(HTML) 1 Page - Rohm |
1 / 5 page Data Sheet www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Schottky Barrier Diode RB551SS-30 lApplications lDimensions (Unit : mm) lLand size figure (Unit : mm) General Rectification lFeatures 1)Small mold type (KMD2) 2)High reliability 3)Low VF lStructure lConstruction Silicon epitaxial planer lAbsolute maximum ratings (Ta=25C) Symbol VRM VR Average rectified forward current Io IFSM Tj Tstg lElectrical characteristics (Ta=25C) Symbol Min. Typ. Max. Unit Conditions VF1 - - 0.36 V VF2 - - 0.47 V IR - - 100 μA Reverse voltage (repetitive peak) 30 V lTaping dimensions (Unit : mm) Parameter Limits Unit Junction temperature 125 C Reverse voltage (DC) 20 V 0.5 A Forward current surge peak(60Hz・1cyc.) 5 A Storage temperature - 40 to +125 C Parameter Forward voltage IF=100mA IF=500mA Reverse current VR=20V KMD2 0.8 0.6±0.03 0.7±0.05 0.8±0.05 0~0.03 ROHM : KMD2 JEITA : - JEDEC :- dot (year week factory) 1/4 2011.10 - Rev.A |
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