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| 2SK3435 |
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 NEC
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2 page 
Preliminary Data Sheet D14604EJ1V0DS00 2 2SK3435 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Drain to Source On-state Resistance RDS(on)1 VGS = 10 V, ID = 40 A 11 14 m Ω RDS(on)2 VGS = 4.0 V, ID = 40 A 16 22 m Ω Gate to Source Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.0 2.5 V Forward Transfer Admittance | yfs |VDS = 10 V, ID = 40 A 21 43 S Drain Leakage Current IDSS VDS = 60 V, VGS = 0 V10 µA Gate to Source Leakage Current IGSS VGS = ±20 V, VDS = 0V ±10 µA Input Capacitance Ciss VDS = 10 V, VGS = 0 V, f = 1 MHz 3200 pF Output Capacitance Coss 520 pF Reverse Transfer Capacitance Crss 260 pF Turn-on Delay Time td(on) ID = 40 A, VGS(on) = 10 V, VDD = 30 V, 80 ns Rise Time tr RG = 10 Ω 1200 ns Turn-off Delay Time td(off) 200 ns Fall Time tf 350 ns Total Gate Charge QG ID = 80 A , VDD = 48 V, VGS = 10 V60 nC Gate to Source Charge QGS 10 nC Gate to Drain Charge QGD 16 nC Body Diode Forward Voltage VF(S-D) IF = 80 A, VGS = 0 V1.0 V Reverse Recovery Time trr IF = 80 A, VGS = 0 V, 46 ns Reverse Recovery Charge Qrr di/dt = 100 A/ µs66 nC TEST CIRCUIT 1 AVALANCHE CAPABILITY RG = 25 Ω 50 Ω PG. L VDD VGS = 20 → 0 V BVDSS IAS ID VDS Starting Tch VDD D.U.T. TEST CIRCUIT 3 GATE CHARGE TEST CIRCUIT 2 SWITCHING TIME PG. RG 0 VGS D.U.T. RL VDD τ = 1 s µ Duty Cycle ≤ 1 % VGS Wave Form ID Wave Form VGS 10 % 90 % VGS(on) 10 % 0 ID 90 % 90 % td(on) tr td(off) tf 10 % τ ID 0 ton toff PG. 50 Ω D.U.T. RL VDD IG = 2 mA 5 5 5 5 5 5 5 5 5 |
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