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FESB8HT Datasheet(PDF) 2 Page - General Semiconductor

Part # FESB8HT
Description  FAST EFFICIENT PLASTIC RECTIFIER
Download  2 Pages
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Manufacturer  GE [General Semiconductor]
Direct Link  http://www.vishay.com
Logo GE - General Semiconductor

FESB8HT Datasheet(HTML) 2 Page - General Semiconductor

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0
50
100
150
0
2.0
4.0
6.0
8.0
10
1
10
100
0
25
50
75
100
125
150
0.1
1
10
100
10
100
1,000
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.1
1.0
10
40
020
40
60
80
100
0.01
0.1
1
10
100
FIG. 1 - MAXIMUM FORWARD CURRENT
DERATING CURVES
AMBIENT TEMPERATURE, °C
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
NUMBER OF CYCLES AT 60 HZ
FIG. 3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG. 4 - TYPICAL REVERSE LEAKAGE
CHARACTERISTICS
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF RATED PEAK REVERSE
VOLTAGE, %
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
REVERSE VOLTAGE, VOLTS
TC=100
°C
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
RESISTIVE OR
INDUCTIVE LOAD
FREE AIR, AMBIENT, TEMPERATURE TA
HEATSINK, CASE TEMPERATURE, TC
50 - 400V
500 - 600V
TJ=125°C
TJ=100°C
TJ=25°C
TJ=25°C
f=1.0 MHz
Vsig=50mVp-p
50-400V
500-600V
RATINGS AND CHARACTERISTIC CURVES FESB8AT THRU FESB8JT
TJ=25°C
PULSE WIDTH=300
µs
1% DUTY CYCLE
TJ=125°C
50 - 200V
300 - 400V
500 - 600V


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