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KSA1015OBU Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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KSA1015OBU Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 / 5 page  © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com KSA1015 Rev. 1.1.2 2 Thermal Characteristics(1) Values are at TA = 25°C unless otherwise noted. Note: 1. PCB size: FR-4 76 x 114 x 1.57 mm3 (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. Electrical Characteristics Values are at TA = 25°C unless otherwise noted. hFE Classification Symbol Parameter Max. Unit PD Total Device Dissipation 400 mW Derate Above 25 °C3.2 mW/ °C RθJA Thermal Resistance, Junction to Ambient 312 °C/W Symbol Parameter Conditions Min. Typ. Max. Unit BVCBO Collector-Base Breakdown Voltage IC = -100 μA, IE = 0 -50 V BVCEO Collector-Emitter Breakdown Voltage IC = -10 mA, IB = 0 -50 V BVEBO Emitter-Base Breakdown Voltage IE = -10 μA, IC = 0 -5 V ICBO Collector Cut-Off Current VCB = -50 V, IE = 0 -0.1 μA IEBO Emitter Cut-Off Current VEB = -5 V, IC = 0 -0.1 μA hFE1 DC Current Gain VCE = -6 V, IC = -2 mA 70 400 hFE2 DC Current Gain VCE = -6 V, IC = -150 mA 25 VCE(sat) Collector-Emitter Saturation Voltage IC = -100 mA, IB = -10 mA -0.1 -0.3 V VBE(sat) Base-Emitter Saturation Voltage IC = -100 mA, IB = -10 mA -1.1 V fT Current Gain Bandwidth Product VCE = -10 V, IC = -1 mA 80 MHz Cob Output Capacitance VCB = -10 V, IE = 0, f = 1 MHz 47 pF NF Noise Figure VCE = -6 V, IC = -0.1 mA, f = 100 Hz, RG = 10 kΩ 0.5 6 dB Classification O Y GR hFE1 70 ~ 140 120 ~ 240 200 ~ 400 |
Similar Part No. - KSA1015OBU |
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