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ADS574AU1K Datasheet(PDF) 3 Page - Texas Instruments

Part # ADS574AU1K
Description  Microprocessor-Compatible Sampling CMOS ANALOG-TO-DIGITAL CONVERTER
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

ADS574AU1K Datasheet(HTML) 3 Page - Texas Instruments

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3
®
ADS574
INTERNAL REFERENCE VOLTAGE
Voltage
+2.4
+2.5
+2.6
TTT
V
Source Current Available for External Loads
0.5
T
mA
POWER SUPPLY REQUIREMENTS
Voltage: VEE (7)
–16.5
VDD
TT
V
VDD
+4.5
+5.5
TT
V
Current: IEE (7) (VEE = –15V)
–1
T
mA
IDD
+13
+20
TT
mA
Power Dissipation (TMIN to TMAX)
(VEE = 0V to +5V)
65
100
TT
mW
TEMPERATURE RANGE
Specification
0
+70
TT
°C
Operating:
–40
+85
TT
°C
Storage
–65
+150
TT
°C
T Same specification as ADS574JE, JP, JU.
NOTES: (1) With fixed 50
Ω resistor from REF OUT to REF IN. This parameter is also adjustable to zero at +25°C. (2) FS in this specification table means Full Scale
Range. That is, for a
±10V input range, FS means 20V; for a 0 to +10V range, FS means 10V. (3) Maximum error at T
MIN and TMAX. (4) Based on using VEE =
+5V, which starts a conversion immediately upon a convert command. Using VEE = 0V to –15V makes the ADS574/ADS774 emulate standard ADC574 operation.
In this mode, the internal sample/hold acquires the input signal after receiving the convert command, and does not assume that the input level has been stable
before the convert command arrives. (5) Using internal reference. (6) This is worst case change in accuracy from accuracy with a +5V supply. (7) VEE is optional,
and is only used to set the mode for the internal sample/hold. When VEE = –15V, IEE = –1mA typ; when VEE = 0V, IEE = ±5µA typ; when VEE = +5V, IEE = +167µA
typ.
SPECIFICATIONS (CONT)
ELECTRICAL
At TA = TMIN to TMAX , VDD = +5V, VEE = –15V to +5V, sampling frequency of 40kHz, and fIN = 10kHz, unless otherwise specified.
ADS574JE, JP, JU
ADS574KE, KP, KU
PARAMETER
MIN
TYP
MAX
MIN
TYP
MAX
UNITS
The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes
no responsibility for the use of this information, and all use of such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrant
any BURR-BROWN product for use in life support devices and/or systems.
ABSOLUTE MAXIMUM RATINGS
VEE to Digital Common ....................................................... +VDD to –16.5V
VDD to Digital Common .............................................................. 0V to +7V
Analog Common to Digital Common ....................................................
±1V
Control Inputs (CE, CS, AO, 12/8, R/C)
to Digital Common .................................................. –0.5V to VDD +0.5V
Analog Inputs (Ref In, Bipolar Offset, 10VIN )
to Analog Common ......................................................................
±16.5V
20VIN to Analog Common .................................................................. ±24V
Ref Out .......................................................... Indefinite Short to Common,
Momentary Short to VDD
Max Junction Temperature ............................................................ +165
°C
Power Dissipation ........................................................................ 1000mW
Lead Temperature (soldering,10s) ................................................. +300
°C
Thermal Resistance,
θ
JA : Plastic DIPs ........................................ 100°C/W
SOIC ................................................... 100
°C/W
ELECTROSTATIC
DISCHARGE SENSITIVITY
This integrated circuit can be damaged by ESD. Burr-Brown
recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling
and installation procedures can cause damage.
ESD damage can range from subtle performance degrada-
tion to complete device failure. Precision integrated circuits
may be more susceptible to damage because very small
parametric changes could cause the device not to meet its
published specifications.
PACKAGE/ORDERING INFORMATION
PACKAGE DRAWING
TEMPERATURE
LINEARITY
PRODUCT
PACKAGE
NUMBER(1)
SINAD(2)
RANGE
ERROR (LSB)
ADS574JE
0.3" Plastic DIP
246
68
0
°C to +70°C
±1
ADS574KE
0.3" Plastic DIP
246
70
0
°C to +70°C
±1/2
ADS574JP
0.6" Plastic DIP
215
68
0
°C to +70°C
±1
ADS574KP
0.6" Plastic DIP
215
70
0
°C to +70°C
±1/2
ADS574JU
SOIC
217
68
0
°C to +70°C
±1
ADS574KU
SOIC
217
70
0
°C to +70°C
±1/2
NOTES: (1) For detailed drawing and dimension table, please see end of data sheet, or Appendix C of Burr-Brown IC Data Book. (2) SINAD is Signal-to-(Noise
and Distortion) expressed in dB.


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