 |
 |
|
| 3SK222 |
|
||||||||||||||
 NEC
|
| ||||||||||||||
|
2 page 
3SK222 2 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Drain to Source Breakdown BVDSX 18 V VG1S = VG2S = –2 V, ID = 10 µA Voltage Drain Current IDSX 0.01 8.0 mA VDS = 6 V, VG2S = 3 V, VG1S = 0.75 V Gate1 to Source Cutoff VG1S(off) 0 +1.0 V VDS = 6 V, VG2S = 3 V, ID = 10 µA Voltage Gate2 to Source Cutoff VG2S(off) 0 +1.0 V VDS = 6 V, VG2S = 3 V, ID = 10 µA Voltage Gate1 Reverse Current IG1SS ±20 nA VDS = 0, VG2S = 0, VG1S = ±8 V Gate2 Reverse Current IG2SS ±20 nA VDS = 0, VG1S = 0, VG2S = ±8 V Forward Transfer |yfs| 15 19.5 mS VDS = 5 V, VG2S = 4 V, ID = 10 mA Admittance f = 1 kHz Input Capacitance Ciss 3.6 4.3 5.0 pF Output Capacitance CDSS 1.0 1.5 2.0 pF Reverse Transfer Crss 0.02 0.03 pF Capacitance Power Gain GPS 21.0 23.0 dB Noise Figure 1 NF1 1.2 2.0 dB Noise Figure 2 NF2 1.0 2.0 dB VDS = 6 V, VG2S = 4 V, ID = 10 mA f = 55 MHz IDSX Classification Class V21/VBA* V22/VBB* Marking V21 V22 IDSX (mA) 0.01 to 3.0 1.0 to 8.0 * Old specification/New specification VDS = 6 V, VG2S = 3 V, ID = 10 mA f = 1 MHz VDS = 6 V, VG2S = 4 V, ID = 10 mA f = 200 MHz |
|
Link URL |
Sponsor of Alldatasheet |
|
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Bookmark | Link Exchange | Manufacturer List All Rights Reserved© Alldatasheet.com 2003 - 2012 |
| Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com | Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl |
