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IXFK32N80Q3 Datasheet(PDF) 1 Page - IXYS Corporation |
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IXFK32N80Q3 Datasheet(HTML) 1 Page - IXYS Corporation |
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1 / 6 page  © 2014 IXYS CORPORATION, All Rights Reserved Symbol Test Conditions Maximum Ratings V DSS T J = 25 C to 150C 800 V V DGR T J = 25 C to 150C, R GS = 1M 800 V V GSS Continuous 30 V V GSM Transient 40 V I D25 T C = 25C 32 A I DM T C = 25C, Pulse Width Limited by TJM 80 A I A T C = 25C 32 A E AS T C = 25C3 J dv/dt I S I DM, VDD VDSS, TJ 150C 50 V/ns P D T C = 25C 1000 W T J -55 ... +150 C T JM 150 C T stg -55 ... +150 C T L Maximum Lead Temperature for Soldering 300 °C T SOLD Plastic Body for 10s 260 °C M d Mounting Torque (TO-264) 1.13/10 Nm/lb.in F C Mounting Force (PLUS247) 20..120 /4.5..27 N/lb Weight TO-264 10 g PLUS247 6 g Symbol Test Conditions Characteristic Values (T J = 25C Unless Otherwise Specified) Min. Typ. Max. BV DSS V GS = 0V, ID = 1mA 800 V V GS(th) V DS = VGS, ID = 4mA 3.0 6.0 V I GSS V GS = 30V, VDS = 0V 200 nA I DSS V DS = 0.8 • VDSS, VGS = 0V 50 A T J = 125C 2 mA R DS(on) V GS = 10V, ID = 0.5 • ID25, Note 1 270 m HiperFETTM Power MOSFET Q3-Class IXFK32N80Q3 IXFX32N80Q3 V DSS = 800V I D25 = 32A R DS(on) 270m t rr 300ns DS100361B(01/14) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier G = Gate D = Drain S = Source Tab = Drain PLUS247 (IXFX) Tab G D S TO-264 (IXFK) S G D Tab Features Low Intrinsic Gate Resistance Low Package Inductance Fast Intrinsic Rectifier Low R DS(on) and QG Advantages High Power Density Easy to Mount Space Savings Applications DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers Temperature and Lighting Controls |
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