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IXTP1N120P Datasheet(PDF) 1 Page - IXYS Corporation |
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IXTP1N120P Datasheet(HTML) 1 Page - IXYS Corporation |
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1 / 4 page  © 2012 IXYS CORPORATION, All Rights Reserved Symbol Test Conditions Maximum Ratings V DSS T J = 25 °C to 150°C 1200 V V DGR T J = 25 °C to 150°C, R GS = 1MΩ 1200 V V GSS Continuous ±20 V V GSM Transient ±30 V I D25 T C = 25°C 1.0 A I DM T C = 25°C, Pulse Width Limited by TJM 1.8 A I A T C = 25°C 1.0 A E AS T C = 25°C 100 mJ dv/dt I S ≤ I DM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns P D T C = 25°C63 W T J -55 ... +150 °C T JM 150 °C T stg -55 ... +150 °C T L 1.6mm (0.062 in.) from Case for 10s 300 °C T SOLD Plastic Body for 10s 260 °C M d Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in. Weight TO-252 0.35 g TO-263 2.50 g TO-220 3.00 g PolarTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXTY1N120P IXTA1N120P IXTP1N120P V DSS = 1200V I D25 = 1A R DS(on) ≤ ≤≤≤≤ 20 Ω Ω Ω Ω Ω DS99870B(06/12) Symbol Test Conditions Characteristic Values (T J = 25°C Unless Otherwise Specified) Min. Typ. Max. BV DSS V GS = 0V, ID = 250μA 1200 V V GS(th) V DS = VGS, ID = 50μA 2.5 4.5 V I GSS V GS = ± 20V, VDS = 0V ±50 nA I DSS V DS = VDSS, VGS = 0V 5 μA T J = 125°C 200 μA R DS(on) V GS = 10V, ID = 0.5 • ID25, Notes 1, 2 15.5 20 Ω Features International Standard Packages Low Q G Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier Advantages High Power Density Easy to Mount Space Savings Applications DC-DC Converters Switch-Mode and Resonant-Mode Power Supplies AC and DC Motor Drives Discharge Circiuts in Lasers, Spark Igniters, RF Generators High Voltage Pulse Power Applications TO-263 AA (IXTA) G S D (Tab) TO-252 (IXTY) G S D (Tab) G = Gate D = Drain S = Source Tab = Drain G D S TO-220AB (IXTP) D (Tab) |
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