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KSD986YS Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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KSD986YS Datasheet(HTML) 1 Page - Fairchild Semiconductor |
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1 / 5 page  ©2000 Fairchild Semiconductor International Rev. A, February 2000 NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings T C=25°C unless otherwise noted * PW ≤300µs, Duty Cycle10% Electrical Characteristics T C=25°C unless otherwise noted * Pulse Test: PW ≤350µs, Duty Cycle≤2% hFE Classification Symbol Parameter Value Units VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Volage : KSD985 : KSD986 60 80 V V VEBO Emitter-Base Voltage 8.0 V IC Collector Current (DC) 1.5 A ICP *Collector Current (Pulse) 3.0 A IB Base Current 0.15 A PC Collector Dissipation (Ta=25°C) 1.0 W PC Collector Dissipation (TC=25°C) 10 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Symbol Parameter Test Condition Min. Typ. Max. Units ICBO Collector Cut-off Current VCB = 60V, IE = 0 10 µA ICER Collector Cut-off Current VCE = 60V, RBE = 51Ω @ TC = 125°C 1.0 mA ICEX1 ICEX2 Collector Cut-off Current VCE = 60V, VBE(off) = -1.5A VCE = 60V, VBE(off) = -1.5A @ TC = 125°C 10 1.0 µA mA IEBO Emitter Cut-off Current VEB = 5V, IC = 0 1.0 mA hFE1 hFE2 *DC Current Gain VCE = 2V, IC = 0.5A VCE = 2V, IC = 1A 1000 2000 30000 VCE(sat) *Collector-Emitter Saturation Voltage IC = 1A, IB = 1mA 1.5 V VBE(sat) *Base-Emitter Saturation Voltage IC = 1A, IB = 1mA 2.0 V tON Turn ON Time VCC = 50V, IC = 1A IB1 = - IB2 = 1mA RL = 50Ω 0.5 µs tSTG Storage Time 1.0 µs tF Fall Time 1.0 µs Classification R O Y hFE2 2000 ~ 5000 4000 ~ 10000 8000 ~ 30000 KSD985/986 Low Frequency Power Amplifier • Low Speed Switching Industrial Use 1 TO-126 1. Emitter 2.Collector 3.Base |
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