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UGF8HT Datasheet(PDF) 1 Page - General Semiconductor |
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UGF8HT Datasheet(HTML) 1 Page - General Semiconductor |
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1 / 2 page  4/98 UGF8HT AND UGF8JT ULTRAFAST SOFT RECOVERY RECTIFIER Reverse Voltage - 500 to 600 Volts Forward Current - 8.0 Amperes FEATURES ♦ Plastic package has Underwriters Laboratories Flammability Classification 94V-0 ♦ Ideally suited for freewheeling diode power factor correction applications ♦ Soft recovery characteristics ♦ Excellent high temperature switching ♦ Planar technology ♦ Optimized to reduce switching losses ♦ High temperature soldering guaranteed: 250°C, 0.25" (6.35mm) from case for 10 seconds MECHANICAL DATA Case: ITO-220AC molded plastic body Terminals: Plated leads, solderable per MIL-STD-750, Method 2026 Polarity: As marked Mounting Position:Any Weight: 0.08 ounce, 2.24 grams Mounting Torque: 5 in. - lbs. max. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. SYMBOLS UGF8HT UGF8JT UNITS Maximum repetitive peak reverse voltage VRRM 500 600 Volts Working peak reverse voltage VRWM 400 480 Volts Maximum RMS voltage VRMS 350 420 Volts Maximum DC blocking voltage VDC 500 600 Volts Maximum average forward rectified current at TC=100°C I(AV) 8.0 Amps Peak forward surge current 8.3ms single half sine-wave superimposed IFSM 100.0 Amps on rated load (JEDEC Method) Maximum instantaneous forward voltage at IF= 8A (NOTE 1) TJ=25°C 1.75 Volts TJ=125°C VF 1.50 Maximum reverse leakage current TC=25°C 30.0 µA at working peak reverse voltage TC=100°C IR 800.0 µA TC=125°C 4.0 mA Maximum reverse recovery time at IF=0.5A, IR=1.0A, Irr=0.25A trr 25 ns Reverse recovery time at Maximum 50 IF=1.0A, di/dt=50A/ µs, VR=30V, Irr=0.1 IRM Typical trr 35 ns Typical softness factor (tb/ta) IF=8.0A, di/dt=240A/ µs, VR=400V Irr=0.1 IRM S 1.0 - Maximum reverse recovery current at IF=8.0A, di/dt=64A/ µs,VR=400V TC=125°C IRM 5.5 Amps Typical reverse recovery current at IF=8.0A, di/dt=240A/ µs, VR=400V TC=125°C IRM 10.0 Amps Peak forward recovery time at Maximum 500 IF=8A, di/dt=64A/ µs measured at 1.1 VF Typical tfr 250 ns Typical thermal resistance from junction to case R ΘJC 5.0 °C/W Operating junction and storage temperature range TJ, TSTG -55 to+150 °C NOTE: (1) Pulse test: 300 µs pulse width, 1% duty cycle NOTICE: Advanced product information is subject to change without notice Dimensions are in inches and (millimeters) NEW PRODUCT NEW PRODUCT NEW PRODUCT 0.060 (1.52) 0.405 (10.27) 0.383 (9.72) 0.670 (17.2) 0.646 (16.4) 0.191 (4.85) 0.171 (4.35) 0.600 (15.5) 0.580 (14.5) 0.560 (14.22) 0.530 (13.46) 0.037 (0.94) 0.027 (0.69) 0.140 (3.56) 0.130 (3.30) 0.350 (8.89) 0.330 (8.38) 0.188 (4.77) 0.172 (4.36) 0.110 (2.80) 0.100 (2.54) 0.131 (3.39) 0.122 (3.08) 0.110 (2.80) 0.100 (2.54) 0.022 (0.55) 0.014 (0.36) 0.205 (5.20) 0.195 (4.95) PIN 1 PIN 2 12 PIN DIA. DIA. ITO-220AC |
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