FQD1P50 datasheet(3/9 Pages) FAIRCHILD

Part #	FQD1P50

Description	500V P-Channel MOSFET

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

Direct Link	http://www.fairchildsemi.com

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3 / 9 page

Rev. B3 January 2009

0.0

0.5

1.0

1.5

2.0

2.5

3.0

10

-1

10

0

150℃

Notes :

※

1. V

GS = 0V

2. 250µ s Pulse Test

25℃

-V

SD , Source-Drain Voltage [V]

24

68

10

-1

10

0

150℃

25℃

-55℃

Notes :

※

1. V

DS = -50V

2. 250µ s Pulse Test

-V

GS , Gate-Source Voltage [V]

10

-1

10

0

10

1

10

-2

10

-1

10

0

V

GS

Top :

-15.0 V

-10.0 V

-8.0 V

-7.0 V

-6.5 V

-6.0 V

Bottom : -5.5 V

Notes :

※

1. 250µ s Pulse Test

2. T

C = 25℃

-V

DS, Drain-Source Voltage [V]

0

2

4

6

8

10

12

0

2

4

6

8

10

12

V

DS = -250V

V

DS = -100V

V

DS = -400V

Note : I

※

D = -1.5 A

Q

G, Total Gate Charge [nC]

10

-1

10

0

10

1

0

100

200

300

400

500

600

C

iss = Cgs + Cgd (Cds = shorted)

C

oss = Cds + Cgd

C

rss = Cgd

Notes :

※

1. V

GS = 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

-V

DS, Drain-Source Voltage [V]

0

123

4

6

8

10

12

14

16

Note : T

※

J = 25

℃

V

GS = - 20V

V

GS = - 10V

-I

D , Drain Current [A]

Typical Characteristics

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

Figure 2. Transfer Characteristics

Figure 1. On-Region Characteristics

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