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RGF1D Datasheet(PDF) 1 Page - Vishay Siliconix |
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RGF1D Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 4 page RGF1A, RGF1B, RGF1D, RGF1G, RGF1J, RGF1K, RGF1M www.vishay.com Vishay General Semiconductor Revision: 11-Dec-13 1 Document Number: 88697 For technical questions, contact: DiodesAmericas@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Surface Mount Glass Passivated Junction Fast Switching Rectifier TYPICAL APPLICATIONS For use in fast switching rectification of power supply, inverters, converters, and freewheeling diodes for consumer, automotive, and telecommunication. FEATURES • Superectifier structure for high reliability condition • Ideal for automated placement • Fast switching for high efficiency • Low leakage current • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 250 °C • AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 MECHANICAL DATA Case: DO-214BA, molded epoxy over glass body Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: Two bands indicate cathode end - 1st band denotes device type and 2nd band denotes repetitive peak reverse voltage rating PPRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 50 V, 100 V, 200 V, 400 V, 600 V, 800 V, 1000 V IFSM 30 A VF 1.3 V trr 150 ns, 250 ns, 500 ns TJ max. 175 °C Package DO-214BA (GF1) Diode variations Single DO-214BA (GF1) SUPERECTIFIER ® MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL RGF1A RGF1B RGF1D RGF1G RGF1J RGF1K RGF1M UNIT Device marking code RA RB RD RG RJ RK RM Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V Maximum average forward rectified current at TL = 120 °C IF(AV) 1.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 30 A Maximum full load reverse current, full cycle average TA = 55 °C IR(AV) 50 μA Operating junction and storage temperature range TJ, TSTG - 65 to + 175 °C |
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